September 2004
ASM3P2180A
rev 1.0
Absolute Maximum Ratings
Symbol
VDD, VIN
TSTG
Parameter
Voltage on any pin with respect to GND
Storage temperature
Rating
-0.5 to + 7.0
-65 to +125
0 to 70
Unit
V
°C
°C
TA
Operating temperature
Note: These are stress ratings only and functional operation is not implied. Exposure to absolute
maximum ratings for extended periods may affect device reliability.
DC Electrical Characteristics
Symbol
VIL
VIH
Parameter
Min
GND – 0.3
2.0
Typ
-
-
Max
0.8
VDD + 0.3
Unit
V
V
Input low voltage
Input high voltage
Input low current (pull-up resistors on inputs SS%,
IIL
-
-
-27
µA
FS1)
Input high current
IIH
-
-
-
-
3
4
-
18
-
-
0.4
-
µA
mA
mA
V
IXOL
IXOH
VOL
VOH
XOUT output low current (@ 0.4V, VDD = 3.3V)
XOUT output high current (@2.5V, VDD = 3.3V)
Output low voltage (VDD = 3.3V, IOL = 4mA)
Output high voltage (VDD = 3.3V, IOH = 4mA)
-
2.5
-
V
Dynamic supply current normal mode
ICC
8
21
35
mA
(3.3V and 10pF loading)
IDD
VDD
Static supply current standby mode
Operating voltage
-
0.8
3.3
-
µA
V
2.8
3.7
Power up time
tON
-
-
0.18
50
-
-
mS
(first locked clock cycle after power up)
Clock output impedance
ZOUT
Ω
AC Electrical Characteristics
Symbol
Parameter
Min
6
6
1.2
0.8
-
Typ Max Unit
CLKIN
CLKOUT
tLH*
tHL*
tJC
Input frequency
Output frequency
-
-
30
30
1.4
1.0
325
55
MHz
MHz
nS
Output rise time (measured at 0.8V to 2.0V)
Output fall time (measured at 2.0V to 0.8V)
Jitter (cycle to cycle)
1.3
0.9
-
nS
pS
tD
Output duty cycle
45
50
%
*tLH and tHL are measured into a capacitive load of 15pF
Peak Reducing EMI Solution
3 of 7
Notice: The information in this document is subject to change without notice.
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
