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EP1S10 参数 Datasheet PDF下载

EP1S10图片预览
型号: EP1S10
PDF下载: 下载PDF文件 查看货源
内容描述: Stratix器件系列数据手册 [Stratix Device Family Data Sheet]
分类和应用:
文件页数/大小: 290 页 / 3583 K
品牌: ALTERA [ ALTERA CORPORATION ]
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TriMatrix Memory  
TriMatrix memory architecture can implement pipelined RAM by  
registering both the input and output signals to the RAM block. All  
TriMatrix memory block inputs are registered providing synchronous  
write cycles. In synchronous operation, the memory block generates its  
own self-timed strobe write enable (WREN) signal derived from the global  
or regional clock. In contrast, a circuit using asynchronous RAM must  
generate the RAM WRENsignal while ensuring its data and address  
signals meet setup and hold time specifications relative to the WREN  
signal. The output registers can be bypassed. Flow-through reading is  
possible in the simple dual-port mode of M512 and M4K RAM blocks by  
clocking the read enable and read address registers on the negative clock  
edge and bypassing the output registers.  
Two single-port memory blocks can be implemented in a single M4K  
block as long as each of the two independent block sizes is equal to or less  
than half of the M4K block size.  
The Quartus II software automatically implements larger memory by  
combining multiple TriMatrix memory blocks. For example, two  
256 × 16-bit RAM blocks can be combined to form a 256 × 32-bit RAM  
block. Memory performance does not degrade for memory blocks using  
the maximum number of words available in one memory block. Logical  
memory blocks using less than the maximum number of words use  
physical blocks in parallel, eliminating any external control logic that  
would increase delays. To create a larger high-speed memory block, the  
Quartus II software automatically combines memory blocks with LE  
control logic.  
Clear Signals  
When applied to input registers, the asynchronous clear signal for the  
TriMatrix embedded memory immediately clears the input registers.  
However, the output of the memory block does not show the effects until  
the next clock edge. When applied to output registers, the asynchronous  
clear signal clears the output registers and the effects are seen  
immediately.  
Parity Bit Support  
The memory blocks support a parity bit for each byte. The parity bit,  
along with internal LE logic, can implement parity checking for error  
detection to ensure data integrity. You can also use parity-size data words  
to store user-specified control bits. In the M4K and M-RAM blocks, byte  
enables are also available for data input masking during write operations.  
2–24  
Stratix Device Handbook, Volume 1  
Altera Corporation  
July 2005