DATA SHEET
Am29F040B
4 Megabit (512 K x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
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5.0 V
±
10% for read and write operations
— Minimizes system level power requirements
Manufactured on 0.32 µm process technology
— Compatible with 0.5 µm Am29F040 device
High performance
— Access times as fast as 55 ns
Low power consumption
— 20 mA typical active read current
— 30 mA typical program/erase current
— 1 µA typical standby current (standard access
time to active mode)
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Flexible sector architecture
— 8 uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased
— Supports full chip erase
— Sector protection:
A hardware method of locking sectors to prevent
any program or erase operations within that sector
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Embedded Algorithms
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— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies bytes at specified addresses
Minimum 1,000,000 program/erase cycles per
sector guaranteed
20-year data retention at 125°C
— Reliable operation for the life of the system
Package options
— 32-pin PLCC, TSOP, or PDIP
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply Flash standard
— Superior inadvertent write protection
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase cycle completion
Erase Suspend/Erase Resume
— Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector,
then resumes the erase operation
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
21445
Rev:
E
Amendment:
5
Issue Date:
November 1, 2006
AMD [ ADVANCED MICRO DEVICES ]
