PRELIMINARY
Am29F080B
8 Megabit (1 M x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
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5.0 V
±
10%, single power supply operation
— Minimizes system level power requirements
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Manufactured on 0.35 µm process technology
— Compatible with 0.5 µm Am29F080 device
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High performance
— Access times as fast as 70 ns
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Low power consumption
— 25 mA typical active read current
— 30 mA typical program/erase current
— 1 µA typical standby current (standard access
time to active mode)
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Flexible sector architecture
— 16 uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased.
— Supports full chip erase
— Group sector protection:
A hardware method of locking sector groups to
prevent any program or erase operations within
that sector group
Temporary Sector Group Unprotect allows code
changes in previously locked sectors
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Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies bytes at specified addresses
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Minimum 1,000,000 program/erase cycles per
sector guaranteed
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Package options
— 40-pin TSOP
— 44-pin SO
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Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply Flash standard
— Superior inadvertent write protection
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Data# Polling and toggle bits
— Provides a software method of detecting
program or erase cycle completion
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Ready/Busy# output (RY/BY#)
— Provides a hardware method for detecting
program or erase cycle completion
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Erase Suspend/Erase Resume
— Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector,
then resumes the erase operation
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Hardware reset pin (RESET#)
— Resets internal state machine to the read mode
Publication#
21503
Rev:
C
Amendment/+1
Issue Date:
April 1998
AMD [ ADVANCED MICRO DEVICES ]
