PRELIMINARY
Am29F200A
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 5.0 Volt-only, Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s
5.0 V
±
10% for read and write operations
— Minimizes system level power requirements
s
High performance
— Access times as fast as 55 ns
s
Low power consumption
— 20 mA typical active read current (byte mode)
— 28 mA typical active read current for
(word mode)
— 30 mA typical program/erase current
— 1
µA
typical standby current
s
Sector erase architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
three 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
s
Top or bottom boot block configurations
available
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Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
s
Minimum 100,000 write/erase cycles guaranteed
s
Package options
— 44-pin SO
— 48-pin TSOP
s
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
s
Data# Polling and Toggle Bit
— Detects program or erase cycle completion
s
Ready/Busy# output (RY/BY#)
— Hardware method for detection of program or
erase cycle completion
s
Erase Suspend/Erase Resume
— Supports reading data from a sector not being
erased
s
Hardware RESET# pin
— Resets internal state machine to the reading
array data
Publication#
20637
Rev:
B
Amendment/+3
Issue Date:
March 1998
AMD [ ADVANCED MICRO DEVICES ]
