D A T A
S H E E T
DC CHARACTERISTICS
CMOS Compatible
Parameter
I
LI
I
LIT
I
LO
Description
Input Load Current
A9, OE#, RESET#
Input Load Current
Output Leakage Current
Test Conditions
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC max
V
CC
= V
CC max
;
A9, OE#, RESET# = 12.5 V
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
CE# = V
IL
, OE# = V
IH
,
f
= 5 MHz, Byte Mode
CE# = V
IL
, OE# = V
IH
,
f
= 5 MHz, Word Mode
CE# = V
IL
, OE#
=
V
IH
OE# = V
IH
, CE# and RESET# = V
CC
±0.5
V
–0.5
0.7 x
V
CC
V
CC
= 5.0 V
I
OL
= 5.8 mA, V
CC
= V
CC min
I
OH
= –2.5 mA, V
CC
= V
CC min
Output High Voltage
V
OH2
V
LKO
Low V
CC
Lock-Out Voltage
I
OH
= –100 µA, V
CC
= V
CC min
0.85
V
CC
V
CC
–0.
4
3.2
4.2
V
11.5
20
28
30
0.3
Min
Typ
Max
±1.0
50
±1.0
40
mA
50
50
5
0.8
V
CC
+
0.3
12.5
0.45
mA
µA
V
V
V
V
V
Unit
µA
µA
µA
I
CC1
V
CC
Active Read Current
(Notes 1, 2)
I
CC2
I
CC3
V
IL
V
IH
V
ID
V
OL
V
OH1
V
CC
Active Write Current
(Notes 2, 3, 4)
V
CC
Standby Current
(Notes 2, 5
Input Low Voltage
Input High Voltage
Voltage for Autoselect and
Temporary Sector Unprotect
Output Low Voltage
Notes:
1. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
2. Maximum I
CC
specifications are tested with V
CC
= V
CCmax
.
3. I
CC
active while Embedded Erase or Embedded Program is in progress.
4. Not 100% tested.
5. I
CC3
= 20 µA max at extended temperature (>+85° C).
24
Am29F400B
21505E5 November 1, 2006
AMD [ ADVANCED MICRO DEVICES ]
