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AM29LV800DT-70EC 参数 Datasheet PDF下载

AM29LV800DT-70EC图片预览
型号: AM29LV800DT-70EC
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 1一M× 8位/ 512的K× 16位) CMOS 3.0伏只引导扇区闪存 [8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 51 页 / 1726 K
品牌: AMD [ AMD ]
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PRELIMINARY  
Am29LV800D  
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)  
CMOS 3.0 Volt-only Boot Sector Flash Memory  
For new designs, S29AL008D supersedes Am29LV800D and is the factory-recommended migration  
path. Please refer to the S29AL008D Data Sheet for specifications and ordering information.  
Distinctive Characteristics  
Single power supply operation  
Top or bottom boot block configurations  
available  
— 2.7 to 3.6 volt read and write operations  
for battery-powered applications  
Embedded Algorithms  
Manufactured on 0.23 µm process  
— Embedded Erase algorithm automatically  
preprograms and erases the entire chip or any  
combination of designated sectors  
technology  
— Compatible with 0.32 µm Am29LV800  
device  
— Embedded Program algorithm  
automatically writes and verifies data at  
specified addresses  
High performance  
— Access times as fast as 70 ns  
Minimum 1 million write cycle guarantee  
Ultra low power consumption (typical  
per sector  
values at 5 MHz)  
20-year data retention at 125°C  
— Reliable operation for the life of the system  
Package option  
— 200 nA Automatic Sleep mode current  
— 200 nA standby mode current  
— 7 mA read current  
— 48-ball FBGA  
— 15 mA program/erase current  
— 48-pin TSOP  
Flexible sector architecture  
— 44-pin SO  
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and  
fifteen 64 Kbyte sectors (byte mode)  
Compatibility with JEDEC standards  
— Pinout and software compatible with single-  
power supply Flash  
— One 8 Kword, two 4 Kword, one 16 Kword, and  
fifteen 32 Kword sectors (word mode)  
— Superior inadvertent write protection  
— Supports full chip erase  
Data# Polling and toggle bits  
— Sector Protection features:  
— Provides a software method of detecting  
program or erase operation completion  
A hardware method of locking a sector to prevent  
any program or erase operations within that  
sector  
Ready/Busy# pin (RY/BY#)  
Sectors can be locked in-system or via  
programming equipment  
— Provides a hardware method of detecting  
program or erase cycle completion  
Temporary Sector Unprotect feature allows code  
changes in previously locked sectors  
Erase Suspend/Erase Resume  
— Suspends an erase operation to read data from,  
or program data to, a sector that is not being  
erased, then resumes the erase operation  
Unlock Bypass Program Command  
— Reduces overall programming time when  
issuing multiple program command  
sequences  
Hardware reset pin (RESET#)  
— Hardware method to reset the device to  
reading array data  
This document contains information on a product under development at FASL LLC. The information is intended to  
help you evaluate this product. FASL LLC reserves the right to change or discontinue work on this proposed product  
without notice.  
Publication Am29LV800D_00 Rev. A Amend. 4  
Issue Date: January 21, 2005