DATA SHEET
Am29PL160C
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
This product has been retired and is not recommended for designs. For new designs, S29GL016A supersedes Am29PL160C. Please refer to the S29GL-A family data sheet for specifica-
tions and ordering information. Availability of this document is retained for reference and historical purposes only.
DISTINCTIVE CHARACTERISTICS
■
16 Mbit Page Mode device
— Byte (8-bit) or word (16-bit) mode selectable via
BYTE# pin
— Page size of 16 bytes/8 words: Fast page read
access from random locations within the page
■
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
■
5 V-tolerant data, address, and control signals
■
High performance read access times
— Page access times as fast as 25 ns at industrial
temperature range
— Random access times as fast as 65 ns
■
Power consumption (typical values at 5 MHz)
— 30 mA read current
— 20 mA program/erase current
— 1 µA standby mode current
— 1 µA Automatic Sleep mode current
■
Flexible sector architecture
— Sector sizes: One 16 Kbyte, two 8 Kbyte, one
224 Kbyte, and seven sectors of 256 Kbytes
each
— Supports full chip erase
■
Bottom boot block configuration only
■
Sector Protection
— A hardware method of locking a sector to prevent
any program or erase operations within that
sector
— Sectors can be locked via programming
equipment
— Temporary Sector Unprotect command
sequence allows code changes in previously
locked sectors
■
Minimum 1 million write cycles guarantee
per sector
■
20-year data retention
■
Manufactured on 0.32 µm process technology
■
Software command-set compatible with JEDEC
standard
— Backward compatible with Am29F and Am29LV
families
■
CFI (Common Flash Interface) compliant
— Provides device-specific information to the
system, allowing host software to easily
reconfigure for different Flash devices
■
Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
■
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
■
Package Options
— 44-pin SO (mask-ROM compatible pinout)
— 48-pin TSOP
This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may
be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
22143
Rev:
C
Amendment:
7
Issue Date:
May 9, 2006
AMD [ ADVANCED MICRO DEVICES ]
