AMIS-30623 参数 Datasheet PDF下载

AMIS-30623 LIN Microstepping Motordriver

10.0 DC Parameters

Data Sheet

The DC parameters are given for Vbb and temperature in their operating ranges. Convention: currents flowing in the circuit are defined

as positive.

Table 5: DC Parameters

Symbol

Pin(s)

Motordriver

I

MSmax,Peak

Parameter

Test Conditions

Min.

Typ.

800

570

Max.

Unit

mA

mA

Max current through motor coil in

normal operation

Max RMS current through coil in

I

MSmax,RMS

normal operation

I

MSabs

MOTXP Absolute error on coil current

MOTXN Error on current ratio I

coilx

/ I

coily

I

MSrel

MOTYP

V

bb

= 12V, T

j

= 50 °C

MOTYN

On resistance for each motor pin V

bb

= 8V, T

j

= 50 °C

R

DSon

(including bond wire) at I

MSmax

V

bb

= 12V, T

j

= 150 °C

V

bb

= 8V, T

j

= 150 °C

I

MSL

Pull down current

HiZ mode

LIN Transmitter

I

bus_on

Dominant state, driver on

V

bus

= 1.4V

I

bus_off

Dominant state, driver off

V

bus

= 0V

LIN

I

bus_off

Recessive state, driver off

V

bus

= V

bat

I

bus_lim

Current limitation

R

slave

Pull-up resistance

LIN Receiver

V

bus_dom

Receiver dominant state

LIN

V

bus_rec

Receiver recessive state

V

bus_hys

Receiver hysteresis

Thermal Warning & Shutdown

T

tw

Thermal warning

T

tsd

(1) (2)

Thermal shutdown

T

low

(2)

Low temperature warning

Supply and Voltage Regulator

V

bb

Nominal operating supply range

V

bbOTP

Supply voltage for OTP zapping (3)

VBB

I

bat

Total current consumption

Unloaded outputs

Sleep mode current consumption

I

bat_s

V

dd

Internal regulated output (4)

8V < V

bb

< 18V

I

ddStop

Digital current consumption

V

bb

< UV

2

VDD

Digital supply reset level @ power

V

ddReset

down (5)

I

ddLim

Current limitation

Pin shorted to ground

Switch Input and Hardwire Address Input

Rt_

OFF

Switch OFF resistance (6)

Switch to Gnd or V

bat

,

Rt_

ON

Switch ON resistance (6)

SWI

Vbb range for guaranteed operation

V

bb_sw

HW2

of SWI and HW2

V

max_sw

Maximum voltage

T < 1s

-10

-7

0.50

0.55

0.70

0.85

2

40

-1

50

20

0

0.6 * V

bb

0.05 * V

bb

138

145

T

tw

+ 10

T

tw

- 155

10

7

1

1

1

1

%

%

Ω

Ω

Ω

Ω

mA

mA

mA

µA

mA

kΩ

V

V

V

°C

°C

°C

V

V

mA

µA

V

mA

V

mA

kΩ

kΩ

V

V

30

20

200

47

0.4 *V

bb

V

bb

0.2 * V

bb

152

6.5

9.0

3.50

50

5

2

4.75

18

10.0

10.0

100

5.50

4.5

42

10

2

6

29

40V

AMI Semiconductor

– June 2006, Rev 3.0

www.amis.com

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