AMIS-49200 Fieldbus MAU
Data Sheet
3.4 Receiver Block
Table 10: Receiver Sub-blocks
Parameter
Band Pass Filter
Input voltage
Output voltage swing
Output slew rate
Input offset voltage
Symbol
V
BP
FLTOUT
SR
V
OS
RF1
Min.
1
1
Typ.
Max.
4
4
Units
V
V
V/µs
Conditions
SIGIN pin to GND
0.6
±
5
60
216
16
43
40
-60
V
DD
-0.6
0.3
50
50
0.3
0.3
V
MID
+0.025
V
MID
V
DD
-0.6
0.3
50
50
0.3
0.3
V
MID
+0.040
V
MID
V
MID
+0.058
V
MID
75
270
20
54
50
-50
90
324
24
65
60
-40
mV
kΩ
kΩ
kΩ
kΩ
mV
mV
V
V
µA
µA
µs
µs
V
V
V
V
µA
µA
µs
µs
Filter resistors
1
RF2
RF3
RF4
Carrier Detector
Threshold voltage
Output high voltage
Output low voltage
Output high current
Output low current
Output rising time
Output leak current
Zero-cross Detector
Threshold voltage
Output high voltage
Output low voltage
Output high current
Output low current
Output rising time
Output leak current
Notes:
1.
V
TH+
V
TH-
V
OH
V
OL
I
OH
I
OL
t
R
t
F
V
TH+
V
TH-
V
OH
V
OL
I
OH
I
OL
t
R
t
F
Relative to V
MID
I
OH
= 0 mA
I
OL
= 0 mA
V
DD
-V
O
≤
0.6V
V
O
≤
0.6V
C
L
= 10pF
C
L
= 10pF
No carrier
Carrier active
I
OH
= 0 mA
I
OL
= 0 mA
V
DD
-V
O
≤
0.6V
V
O
≤
0.6V
C
L
= 10pF
C
L
= 10pF
The band pass filter is made up of a two pole high pass filter in series with a two pole low pass filter. The filter consists of four resistors internal to AMIS-49200,
and four external capacitors. The active part of each filter is an amplifier connected in a follower configuration.
AMI Semiconductor
– Jan. 07, M-20532-003
www.amis.com
11
AMI [ AMI SEMICONDUCTOR ]
