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N08M1618L1A 参数 Datasheet PDF下载

N08M1618L1A图片预览
型号: N08M1618L1A
PDF下载: 下载PDF文件 查看货源
内容描述: 8MB超低功耗异步医疗CMOS SRAM 512K 】 16位 [8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K 】 16 bit]
分类和应用: 医疗静态存储器
文件页数/大小: 11 页 / 196 K
品牌: AMI [ AMI SEMICONDUCTOR ]
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AMI Semiconductor, Inc.
ULP Memory Solutions
670 North McCarthy Blvd. Suite 220
Milpitas, CA 95035
PH: 408-935-7777, FAX: 408-935-7770
N08M1618L1A
Advance Information
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
512K × 16 bit
Overview
The N08M1618L1A is an integrated memory
device
intended for non life-support medical
applications.
This device is a 8 megabit memory
organized as 524,288 words by 16 bits. The device
is designed and fabricated using AMI
Semiconductor’s advanced CMOS technology with
reliability inhancements for medical users. The
device operates with two chip enable (CE1 and
CE2) controls and output enable (OE) to allow for
easy memory expansion. Byte controls (UB and
LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. This device is optimal for
various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40
o
C to +85
o
C and is
available in a JEDEC standard BGA package.
Features
• Dual voltage for Optimum Performance:
Vccq - 2.3 to 3.6 Volts
Vcc - 1.4 to 2.2 Volts
• Very low standby current
0.5µA at 1.8V and 37 deg C
• Very low operating current
1.0mA at 1.8V and 1µs (Typical)
• Very low Page Mode operating current
0.5mA at 1.8V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.2V
• Special Processing to reduce Soft Error Rate
(SER)
• Automatic power down to standby mode
Product Family
Part Number
Package Type
Operating
Temperature
Power
Supply
Speed
Standby
Operating
Current (I
SB
), Current (Icc),
Max
Max
N08M1618L1AB
48 - BGA
2.3V-3.6V(V
CCQ
) 85ns @ 1.7V
-40
o
C to +85
o
C 1.4V-2.2V(V ) 150ns @ 1.4V
CC
20
µA
2.5 mA @
1MHz
N08M1618L1AW
Wafer
Pin Configuration
1
A
B
C
D
E
F
G
H
LB
I/O
8
I/O
9
V
SS
Pin Descriptions
3
A
0
A
3
A
5
A
17
NC
A
14
A
12
A
9
2
OE
UB
I/O
10
I/O
11
4
A
1
A
4
A
6
A
7
A
16
A
15
A
13
A
10
5
A
2
CE1
I/O
1
I/O
3
I/O
4
I/O
5
WE
A
11
6
CE2
I/O
0
I/O
2
V
CC
V
SS
I/O
6
I/O
7
NC
Pin Name
A
0
-A
18
WE
CE1, CE2
OE
LB
UB
I/O
0
-I/O
15
V
CC
V
SS
V
CCQ
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Power I/O pins only
Not Connected
V
CCQ
I/O
12
I/O
14
I/O
13
I/O
15
A
18
NC
A
8
48 Pin BGA (top)
8 x 10 mm
Stock No. 23211-03 9/21/06
ADVANCE INFORMATION
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.
1