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PI0512HSN 参数 Datasheet PDF下载

PI0512HSN图片预览
型号: PI0512HSN
PDF下载: 下载PDF文件 查看货源
内容描述: 25微米间距宽孔径光谱光电二极管阵列 [25-μm-Pitch Wide Aperture Spectroscopic Photodiode Arrays]
分类和应用: 光电二极管光电二极管
文件页数/大小: 8 页 / 552 K
品牌: AMI [ AMI SEMICONDUCTOR ]
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Peripheral
Imaging
Corporation
PI0256HSN, PI0512HSN, PI1024HSN
25-µm-Pitch Wide Aperture Spectroscopic Photodiode Arrays
Engineering Data Sheet
Description
Peripheral Imaging Corporation's HSN series is family
of self-scanning photodiode solid-state linear imaging
arrays.
These photodiode sensors employ PIC’s
proprietary CMOS Image Sensing Technology to
integrate the sensors into a single monolithic chip.
These sensors are optimally designed for applications
in spectroscopy. Accordingly, these sensors contain a
linear array of photodiodes with an optimized geomet-
rical aspect ratio (25-µm aperture pitch x 2500-µm
aperture width) for helping to maintain mechanical
stability in spectroscopic instruments and for providing
a large light-capturing ability. The family of sensors
consists of photodiode arrays of various lengths, 256,
512, and 1024 pixels.
The HSN photodiode arrays are mounted in 22-pin
ceramic side-brazed dual-in-line packages that fit in
standard DIP sockets. A diagram of its pinout configu-
ration is seen in Figure 1.
VSS
VDD
ABG
ADDCAP
TD1
VSS
TD2
NC
NC
NC
ABD
1
2
3
4
5
6
7
8
9
10
11
22
21
20
19
18
17
16
15
14
13
12
NC
VSS
START
CLK
NC
VDD
EOS
NC
VSS
QOUT
VDD
Features
Selectable saturation charge capacities. 65-pC
capacity for wider dynamic range. 25-pC for lower
noise readout.
Wide spectral response (180 – 1000 nm) for UV
and IR response.
NP junction photodiodes with superior resistance
to UV damage.
Low dark current.
Integration time up to 11 seconds at room te m-
perature.
Integration time extended to hours by cooling.
Anti-blooming circuitry.
High linearity.
Low power dissipation (less than 1 mW).
Geometrical structure for enhanced stability and
registration.
Standard 22-lead dual-in-line IC package.
Figure 1. Pinout configuration.
Sensor Characteristics
The Peripheral Imaging Corporation's self-scanned
HSN photodiodes are spaced on a 25-µm pitch. The
line density is 40 diodes/mm and accordingly the
overall die lengths of the different arrays vary with the
number of photodiodes. For example, the 256-pixel
array is 6.4-mm long, the 512-pixel array is 12.8-mm
long, and the 1024-pixel array is 25.6-mm long. Each
array has four additional dummy photodiodes. On each
side, there are one dark (non-imaging) dummy photo-
diode and one imaging dummy photodiode. The height
of the sensors is 2500
µm.
The tall, narrow apertures
make these sensors desirable for use in monochro-
mators and spectrographs.
Page 1 of 8
March 13, 2002