™
Peripheral
Imaging
Corporation
PI0128WSN, PI0256WSN, PI0512WSN
50-m
m-Pitch Wide Aperture Spectroscopic Photodiode Arrays
Engineering Data Sheet
Description
Peripheral Imaging Corporation's WSN series is family
of self-scanning photodiode solid-state linear imaging
arrays.
These photodiode sensors employ PIC’s
proprietary CMOS Image Sensing Technology to
integrate the sensors into a single monolithic chip.
These sensors are optimally designed for applications
in spectroscopy. Accordingly, these sensors contain a
linear array of photodiodes with an optimized geomet-
rical aspect ratio (50-m aperture pitch x 2500-m
m
m
aperture width) for helping to maintain mechanical
stability in spectroscopic instruments and for providing
a large light-capturing ability. The family of sensors
consists of photodiode arrays of various lengths, 128,
256, and 512 pixels.
The WSN photodiode arrays are mounted in 22-pin
ceramic side-brazed dual-in-line packages that fit in
standard DIP sockets. A diagram of its pinout configu-
ration is seen in Figure 1.
Features
·
·
·
·
·
·
·
·
·
·
65-pC saturation capacity for wide dynamic range.
Wide spectral response (180 – 1000 nm) for UV
and IR response.
NP junction photodiodes with superior resistance
to UV damage.
Low dark current.
Integration time up to 9 seconds at room tempera-
ture.
Integration time extended to hours by cooling.
High linearity.
Low power dissipation (less than 1 mW).
Geometrical structure for enhanced stability and
registration.
Standard 22-lead dual-in-line IC package.
Figure 1. Pinout configuration.
Sensor Characteristics
The Peripheral Imaging Corporation's self-scanned
WSN photodiodes are spaced on a 50-m pitch. The
m
line density is 20 diodes/mm and accordingly the
overall die lengths of the different arrays vary with the
number of photodiodes. For example, the 128-pixel
array is 6.4-mm long, the 256-pixel array is 12.8-mm
long, and the 512-pixel array is 25.6-mm long. Each
array has four additional dummy photodiodes. On each
side, there are one dark (non-imaging) dummy photo-
diode and one imaging dummy photodiode. The height
of the sensors is 2500
m
m. The tall, narrow apertures
make these sensors desirable for use in monochro-
mators and spectrographs.
Page 1 of 8
Revised March 21, 2002
AMI [ AMI SEMICONDUCTOR ]
