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A25L010M-UFG 参数 Datasheet PDF下载

A25L010M-UFG图片预览
型号: A25L010M-UFG
PDF下载: 下载PDF文件 查看货源
内容描述: 16Mbit的低电压,串行闪存的100MHz统一4KB扇区 [16Mbit Low Voltage, Serial Flash Memory With 100MHz Uniform 4KB Sectors]
分类和应用: 闪存
文件页数/大小: 43 页 / 681 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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A25L016 Series
INSTRUCTIONS
All instructions, addresses and data are shifted in and out of
the device, most significant bit first.
Serial Data Input (DIO) is sampled on the first rising edge of
Serial Clock (C) after Chip Select (
S
) is driven Low. Then, the
one-byte instruction code must be shifted in to the device,
most significant bit first, on Serial Data Input (DIO), each bit
being latched on the rising edges of Serial Clock (C).
The instruction set is listed in Table 3.
Every instruction sequence starts with a one-byte instruction
code. Depending on the instruction, this might be followed by
address bytes, or by data bytes, or by both or none.
In the case of a Read Data Bytes (READ), Read Data Bytes at
Higher Speed (Fast_Read), Read Identification (RDID), Read
Electronic Manufacturer and Device Identification (REMS),
Read Status Register (RDSR) or Release from Deep
Power-down, Read Device Identification and Read Electronic
Signature (RES) instruction, the shifted-in instruction se-
quence is followed by a data-out sequence. Chip Select (
S
)
can be driven High after any bit of the data-out sequence is
being shifted out.
In the case of a Page Program (PP), Sector Erase (SE), Block
Erase (BE), Chip Erase (CE), Write Status Register (WRSR),
Write Enable (WREN), Write Disable (WRDI) or Deep
Power-down (DP) instruction, Chip Select (
S
) must be driven
High exactly at a byte boundary, otherwise the instruction is
rejected, and is not executed. That is, Chip Select (
S
) must
driven High when the number of clock pulses after Chip Select
(
S
) being driven Low is an exact multiple of eight.
All attempts to access the memory array during a Write Status
Register cycle, Program cycle or Erase cycle are ignored, and
the internal Write Status Register cycle, Program cycle or
Erase cycle continues unaffected.
Table 3. Instruction Set
Instruction
Description
One-byte
Instruction Code
Address
Bytes
Dummy
Bytes
Data
Bytes
WREN
WRDI
RDSR
WRSR
READ
FAST_READ
FAST_READ_DUAL
_OUTPUT
FAST_READ_DUAL
_INPUT-OUTPUT
PP
SE
BE
CE
DP
RDID
REMS
Write Enable
Write Disable
Read Status Register
Write Status Register
Read Data Bytes
Read Data Bytes at Higher Speed
Read Data Bytes at Higher Speed by
Dual Output
(1)
Read Data Bytes at Higher Speed by
Dual Input and Dual Output
(1)
Page Program
Sector Erase
Block Erase
Chip Erase
Deep Power-down
Read Device Identification
Read Electronic Manufacturer & Device
Identification
Release from Deep Power-down, and
Read Electronic Signature
Release from Deep Power-down
0000 0110
0000 0100
0000 0101
0000 0001
0000 0011
0000 1011
00111011
10111011
0000 0010
0010 0000
1101 1000
1100 0111
1011 1001
1001 1111
1001 0000
06h
04h
05h
01h
03h
0Bh
3Bh
BBh
02h
20h
D8h
C7h
B9h
9Fh
90h
0
0
0
0
3
3
3
3
(2)
3
3
3
0
0
0
1
(3)
0
0
0
0
0
0
0
1
1
1
(2)
0
0
0
0
0
0
2
3
0
0
0
1 to
1
1 to
1 to
1 to
1 to
1 to 256
0
0
0
0
1 to
1 to
1 to
0
RES
1010 1011
ABh
Note: (1) DIO = (D
6
, D
4
, D
2
, D
0
)
DO = (D
7
, D
5
, D
3
, D
1
)
(2) Dual Input, DIO = (A22, A20, A18, ………, A6, A4, A2, A0)
DO = (A23, A21, A19, …….., A7, A5, A3, A1)
(3) ADD= (00h) will output manufacturer’s ID first and ADD=(01h) will output device ID first
(March, 2012, Version 2.0)
10
AMIC Technology Corp.