欢迎访问ic37.com |
会员登录 免费注册
发布采购

A29800UV-70 参数 Datasheet PDF下载

A29800UV-70图片预览
型号: A29800UV-70
PDF下载: 下载PDF文件 查看货源
内容描述: 1024K ×8位/ 512K ×16位CMOS 5.0伏只,引导扇区闪存 [1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 34 页 / 515 K
品牌: AMICC [ AMIC TECHNOLOGY ]
 浏览型号A29800UV-70的Datasheet PDF文件第2页浏览型号A29800UV-70的Datasheet PDF文件第3页浏览型号A29800UV-70的Datasheet PDF文件第4页浏览型号A29800UV-70的Datasheet PDF文件第5页浏览型号A29800UV-70的Datasheet PDF文件第6页浏览型号A29800UV-70的Datasheet PDF文件第7页浏览型号A29800UV-70的Datasheet PDF文件第8页浏览型号A29800UV-70的Datasheet PDF文件第9页  
A29800 Series
1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only,
Preliminary
Features
n
5.0V
±
10% for read and write operations
n
Access times:
- 55/70/90 (max.)
n
Current:
- 28mA read current (word mode)
- 20 mA typical active read current (byte mode)
- 30 mA typical program/erase current
- 1
µA
typical CMOS standby
n
Flexible sector architecture
-
16 Kbyte/ 8 KbyteX2/ 32 Kbyte/ 64 KbyteX15 sectors
-
8 Kword/ 4 KwordX2/ 16 Kword/ 32 KwordX15 sectors
-
Any combination of sectors can be erased
-
Supports full chip erase
-
Sector protection:
A hardware method of protecting sectors to prevent
any inadvertent program or erase operations within
that sector
n
Top or bottom boot block configurations available
n
Embedded Erase Algorithms
- Embedded Erase algorithm will automatically erase
the entire chip or any combination of designated
sectors and verify the erased sectors
- Embedded Program algorithm automatically writes
and verifies bytes at specified addresses
n
Typical 100,000 program/erase cycles per sector
n
20-year data retention at 125°C
- Reliable operation for the life of the system
n
Compatible with JEDEC-standards
- Pinout and software compatible with single-power-
supply Flash memory standard
-
Superior inadvertent write protection
n
Data
Polling and toggle bits
-
Provides a software method of detecting completion
of program or erase operations
n
Erase Suspend/Erase Resume
-
Suspends a sector erase operation to read data from,
or program data to, a non-erasing sector, then
resumes the erase operation
n
Hardware reset pin (
RESET
)
-
Hardware method to reset the device to reading array
data
n
Package options
-
44-pin SOP or 48-pin TSOP (I)
Boot Sector Flash Memory
General Description
The A29800 is a 5.0 volt only Flash memory organized as
1048,576 bytes of 8 bits or 524,288 words of 16 bits each. The
A29800 offers the
RESET
function. The 1024 Kbytes of data
are further divided into nineteen sectors for flexible sector erase
capability. The 8 bits of data appear on I/O
0
- I/O
7
while the
addresses are input on A1 to A18; the 16 bits of data appear on
I/O
0
~I/O
15
. The A29800 is offered in 44-pin SOP and 48-Pin
TSOP packages. This device is designed to be programmed in-
system with the standard system 5.0 volt VCC supply. Additional
12.0 volt VPP is not required for in-system write or erase
operations. However, the A29800 can also be programmed in
standard EPROM programmers.
The A29800 has the first toggle bit, I/O
6
, which indicates whether
an Embedded Program or Erase is in progress, or it is in the
Erase Suspend. Besides the I/O
6
toggle bit, the A29800 has a
second toggle bit, I/O
2
, to indicate whether the addressed sector
is being selected for erase. The A29800 also offers the ability to
program in the Erase Suspend mode. The standard A29800
offers access times of 55, 70 and 90 ns, allowing high-speed
microprocessors to operate without wait states. To eliminate bus
contention the device has separate chip enable (
CE
), write
enable (
WE
) and output enable (
OE
) controls.
The device requires only a single 5.0 volt power supply for both
read and write functions. Internally generated and regulated
voltages are provided for the program and erase operations.
The A29800 is entirely software command set compatible with
the JEDEC single-power-supply Flash standard. Commands are
written to the command register using standard microprocessor
write timings. Register contents serve as input to an internal
state-machine that controls the erase and programming circuitry.
Write cycles also internally latch addresses and data needed for
the programming and erase operations. Reading data out of the
device is similar to reading from other Flash or EPROM devices.
Device programming occurs by writing the proper program
command sequence. This initiates the Embedded Program
algorithm - an internal algorithm that automatically times the
program pulse widths and verifies proper program margin.
Device erasure occurs by executing the proper erase command
sequence. This initiates the Embedded Erase algorithm - an
internal algorithm that automatically preprograms the array (if it
is not already programmed) before executing the erase
operation.
PRELIMINARY
(May, 2001, Version 0.0)
1
AMIC Technology, Inc.