欢迎访问ic37.com |
会员登录 免费注册
发布采购

A42L2604V-50U 参数 Datasheet PDF下载

A42L2604V-50U图片预览
型号: A42L2604V-50U
PDF下载: 下载PDF文件 查看货源
内容描述: 与EDO页模式4M X 4 CMOS动态RAM [4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 25 页 / 261 K
品牌: AMICC [ AMIC TECHNOLOGY ]
 浏览型号A42L2604V-50U的Datasheet PDF文件第1页浏览型号A42L2604V-50U的Datasheet PDF文件第2页浏览型号A42L2604V-50U的Datasheet PDF文件第4页浏览型号A42L2604V-50U的Datasheet PDF文件第5页浏览型号A42L2604V-50U的Datasheet PDF文件第6页浏览型号A42L2604V-50U的Datasheet PDF文件第7页浏览型号A42L2604V-50U的Datasheet PDF文件第8页浏览型号A42L2604V-50U的Datasheet PDF文件第9页  
A42L2604 Series
Selection Guide
Symbol
t
RAC
t
AA
t
CAC
t
OEA
t
RC
t
PC
Description
Maximum RAS Access Time
Maximum Column Address Access Time
Maximum CAS Access Time
Maximum Output Enable ( OE ) Access Time
Minimum Read or Write Cycle Time
Minimum EDO Cycle Time
-45
45
20
12
12
76
18
-50
50
22
13
13
84
20
Unit
ns
ns
ns
ns
ns
ns
Functional Description
The A42L2604 reads and writes data by multiplexing an
22-bit address into a 11-bit(2K) row and column address.
RAS
and
CAS
are used to strobe the row address and the
column address, respectively.
A Read cycle is performed by holding the WE signal high
during RAS /
CAS
operation. A Write cycle is executed by
holding the WE signal low during RAS /
CAS
operation;
the input data is latched by the falling edge of WE or
CAS
, whichever occurs later. The data inputs and outputs
are routed through 4 common I/O pins, with RAS ,
CAS
,
WE and OE controlling the in direction.
EDO Page Mode operation all 2048(2K) columns within a
selected row to be randomly accessed at a high data rate.
A EDO Page Mode cycle is initiated with a row address
latched by RAS followed by a column address latched by
CAS
. While holding RAS low,
CAS
can be toggled to
strobe changing column addresses, thus achieving shorter
cycle times.
The A42L2604 offers an accelerated Fast Page Mode
cycle through a feature called Extended Data Out, which
keeps the output drivers on during the
CAS
precharge
time (t
cp
). Since data can be output after
CAS
goes high,
the user is not required to wait for valid data to appear
before starting the next access cycle. Data-out will remain
valid as long as RAS and OE are low, and WE is high;
this is the only characteristic which differentiates Extended
Data Out operation from a standard Read or Fast Page
Read.
A memory cycle is terminated by returning both RAS and
CAS
high. Memory cell data will retain its correct state by
maintaining power and accessing all 2048(2K)
combinations of the 11-bit(2K) row addresses, regardless
of sequence, at least once every 32ms through any RAS
cycle (Read, Write) or RAS Refresh cycle ( RAS -only,
CBR, or Hidden). The CBR Refresh cycle automatically
controls the row addresses by invoking the refresh counter
and controller.
Power-On
The initial application of the VCC supply requires a 200 µs
wait followed by a minimum of any eight initialization cycles
containing a RAS clock. During Power-On, the VCC
current is dependent on the input levels of RAS and
CAS
.
It is recommended that RAS and
CAS
track with VCC or
be held at a valid V
IH
during Power-On to avoid current
surges.
PRELIMINARY
(June, 2002, Version 0.3)
2
AMIC Technology, Inc.