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A43E3632G-75I 参数 Datasheet PDF下载

A43E3632G-75I图片预览
型号: A43E3632G-75I
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16位×4银行同步DRAM [1M X 16 Bit X 4 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 42 页 / 502 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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A43L2616B
1M X 16 Bit X 4 Banks Synchronous DRAM
Feature
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks / Pulse
RAS
MRS cycle with address key programs
- CAS Latency (2,3)
- Burst Length (1,2,4,8 & full page)
-
Burst Type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the
system clock
Clock Frequency: 166MHz @ CL=3
143MHz @ CL=3
Burst Read Single-bit Write operation
DQM for masking
Auto & self refresh
64ms refresh period (4K cycle)
Commercial Temperature Operation : 0
°
C~70
°
C
Industrial Temperature Operation : -40
°
C~85
°
C for –U
grade
Available in 54-pin TSOP(II) package
Package is available to lead free (-F series)
All Pb-free (Lead-free) products are RoHS compliant
General Description
The A43L2616B is 67,108,864 bits synchronous high data
rate Dynamic RAM organized as 4 X 1,048,576 words by
16 bits, fabricated with AMIC’s high performance CMOS
technology. Synchronous design allows precise cycle
control with the use of system clock.
I/O transactions are possible on every clock cycle. Range
of operating frequencies, programmable latencies allows
the same device to be useful for a variety of high
bandwidth,
high
performance
memory
system
applications.
Pin Configuration
TSOP (II)
VDDQ
VSSQ
DQ
15
DQ
12
DQ
14
DQ
13
DQ
11
DQ
10
UDQM
VDDQ
VSSQ
CKE
VSS
VSS
DQ
8
54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28
A43L2616BV
1
VDD
2
DQ
0
3
VDDQ
4
DQ
1
5
DQ
2
6
VSSQ
7
DQ
3
8
DQ
4
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27
VSSQ
A10/AP
VDDQ
VDD
LDQM
VDD
CS
BA0
BA1
A0
A1
WE
CAS
RAS
DQ
5
DQ
6
DQ
7
A2
A3
(December, 2009, Version 1.3)
1
AMIC Technology, Corp.
VSS
DQ
9
NC
CK
A11
NC
A9
A8
A7
A6
A5
A4