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A43L3616V-7 参数 Datasheet PDF下载

A43L3616V-7图片预览
型号: A43L3616V-7
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4银行同步DRAM [2M X 16 Bit X 4 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 41 页 / 865 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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A43L3616
2M X 16 Bit X 4 Banks Synchronous DRAM
Features
n
n
n
n
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks / Pulse RAS
MRS cycle with address key programs
- CAS Latency (2,3)
- Burst Length (1,2,4,8 & full page)
-
Burst Type (Sequential & Interleave)
n
All inputs are sampled at the positive going edge of
the system clock
n
Clock Frequency: 166MHz @ CL=3
143MHz @ CL=3
n
Burst Read Single-bit Write operation
n
DQM for masking
n
Auto & self refresh
n
64ms refresh period (4K cycle)
n
54 Pin TSOP (II)
n
Low Self Refresh Current version for –V grade
General Description
The A43L3616 is 134,217,728 bits synchronous high data
rate Dynamic RAM organized as 4 X 2,097,152 words by
16 bits, fabricated with AMIC’s high performance CMOS
technology. Synchronous design allows precise cycle
control with the use of system clock. I/O transactions are
possible on every clock cycle. Range of operating
frequencies, programmable latencies allows the same
device to be useful for a variety of high bandwidth, high
performance memory system applications.
Pin Configuration
n
TSOP (II)
VDDQ
VSSQ
DQ
14
DQ
13
DQ
11
UDQM
VDDQ
VSSQ
DQ
15
DQ
12
DQ
10
CKE
VSS
VSS
DQ
8
54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28
A43L3616V
1
VDD
2
DQ
0
3
VDDQ
4
DQ
1
5
DQ
2
6
VSSQ
7
DQ
3
8
DQ
4
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27
VSSQ
WE
A3
A10/AP
VDDQ
VDD
LDQM
VDD
BS0
BS1
CS
A0
A1
CAS
RAS
DQ
5
DQ
6
DQ
7
A2
(February, 2002, Version 3.0)
1
AMIC Technology, Inc.
VSS
DQ
9
NC
CK
A11
NC
A9
A8
A7
A6
A5
A4