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A43P8316G-95I 参数 Datasheet PDF下载

A43P8316G-95I图片预览
型号: A43P8316G-95I
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16位×4银行同步DRAM [1M X 16 Bit X 4 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 42 页 / 502 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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A43L2616B
Pin Descriptions
Symbol
Name
Description
CLK
CS
System Clock
Chip Select
Active on the positive going edge to sample all inputs.
Disables or Enables device operation by masking or enabling all inputs except
CLK, CKE and L(U)DQM
Masks system clock to freeze operation from the next clock cycle.
CKE
Clock Enable
CKE should be enabled at least one clock + tss prior to new command.
Disable input buffers for power down in standby.
Row / Column addresses are multiplexed on the same pins.
A0~A11
Address
Row address : RA0~RA11, Column address: CA0~CA7
Selects bank to be activated during row address latch time.
BA0, BA1
Bank Select Address
Selects band for read/write during column address latch time.
RAS
Row Address Strobe
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
CAS
Column Address
Strobe
Write Enable
Data Input/Output
Mask
Data Input/Output
Power
Supply/Ground
Data Output
Power/Ground
No Connection
Latches column addresses on the positive going edge of the CLK with
CAS
low.
Enables column access.
Enables write operation and Row precharge.
Makes data output Hi-Z, t SHZ after the clock and masks the output.
Blocks data input when L(U)DQM active.
Data inputs/outputs are multiplexed on the same pins.
Power Supply: +3.3V
±
0.3V/Ground
Provide isolated Power/Ground to DQs for improved noise immunity.
WE
L(U)DQM
DQ
0-15
VDD/VSS
VDDQ/VSSQ
NC/RFU
(December, 2009, Version 1.3)
3
AMIC Technology, Corp.