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A61L6316S-12 参数 Datasheet PDF下载

A61L6316S-12图片预览
型号: A61L6316S-12
PDF下载: 下载PDF文件 查看货源
内容描述: 64K ×16位高速CMOS SRAM [64K X 16 BIT HIGH SPEED CMOS SRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 15 页 / 149 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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A61L6316 Series
Absolute Maximum Ratings*
VCC to GND . . . . . . . . . . . . . . . . . . . . . . -0.5V to +4.6V
IN, IN/OUT Volt to GND . . . . . . . . -0.5V to VCC + 0.5V
Operating Temperature, Topr . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . 0°C to +70°C or -25°C to +85°C
Storage Temperature, Tstg . . . . . . . . . -55°C to +125°C
Power Dissipation, P
T
. . . . . . . . . . . . . . . . . . . . . 0.7W
Soldering Temp. & Time . . . . . . . . . . . . . 260°C, 10 sec
*Comments
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of this
device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied or intended. Exposure to the absolute
maximum rating conditions for extended periods may
affect device reliability.
DC Electrical Characteristics
(T
A
= 0°C to + 70°C or -25°C to +85°C, -10: 3.3V+10%, -5%; -12, -15: 3.3V±10%)
Symbol
Parameter
A61L6316-10
Min.
I
LI
I
LO
Input Leakage
Output Leakage
-
-
Max.
2
2
A61L6316-12
Min.
-
-
Max.
2
2
A61L6316-15
Min.
-
-
Max.
2
2
µA
µA
V
IN
= GND to VCC
CE = V
IH
, OE = V
IH
V
I/O
= GND to VCC
CE = V
IL
, I
I/O
= 0 mA
Min. Cycle, Duty = 100%
CE = V
IH
CE
VCC - 0.2V,
V
IN
VCC -0.2V or
V
IN
0.2V
I
OL
= 8 mA
I
OH
= -4 mA
Unit
Conditions
I
CC1
(2)
I
SB
Dynamic Operating
Current
-
-
230
25
-
-
220
25
-
-
210
25
mA
mA
I
SB1
Standby Power
Supply Current
-
12
-
12
-
12
mA
V
OL
V
OH
Output Low Voltage
Output High Voltage
-
2.4
0.4
-
-
2.4
0.4
-
-
2.4
0.4
-
V
V
Notes: 1. V
IL
= -3.0V for pulses less than 20 ns.
2. I
CC1
is dependent on output loading, cycle rates, and Read/Write patterns.
(July, 2002, Version 1.1)
4
AMIC Technology, Inc.