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LP61L256BS-12 参数 Datasheet PDF下载

LP61L256BS-12图片预览
型号: LP61L256BS-12
PDF下载: 下载PDF文件 查看货源
内容描述: 32K ×8位高速低VCC CMOS SRAM [32K X 8 Bit High SPEED LOW VCC CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 135 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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LP61L256B Series
32K X 8 Bit High SPEED LOW VCC CMOS SRAM
Features
n
Single +3.3 volt power supply
n
Access times: 12 ns (max.)
n
Current: Operating: 100mA (max.)
Standby:
10mA (max.)
n
Full static operation, no clock or refreshing required
n
n
n
n
All inputs and outputs directly TTL compatible
Common I/O using three-state output
Data retention voltage: 2V (min.)
Available in 28-pin SOJ and TSOP packages
General Description
The LP61L256B is a high-speed, low-power 262,144-bit
static random access memory organized as 32,768 words
by 8 bits that operates on a single 3.3V power supply.
Input and three-state outputs are TTL compatible and
allow for direct interfacing with common system bus
structures.
Minimum standby power is drawn by this device when CE
is at a high level, independent of the other input levels.
Data retention is guaranteed at a power supply voltage as
low as 2V.
Pin Configurations
n
SOJ
n
TSOP
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O
1
I/O
2
I/O
3
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
A13
A8
14
1
LP61L256BV
A9
A11
OE
A10
CE
I/O
8
I/O
7
I/O
6
I/O
5
I/O
4
15
LP61L256B
28
Pin No.
Pin
Name
Pin No.
Pin
Name
1
OE
15
A2
2
A11
16
A1
3
A9
17
A0
4
A8
18
I/O
1
5
A13
19
I/O
2
6
WE
20
7
VCC
21
8
A14
22
I/O
4
9
A12
23
I/O
5
10
A7
24
I/O
6
11
A6
25
I/O
7
12
A5
26
I/O
8
13
A4
27
CE
14
A3
28
A10
I/O
3
GND
(August, 2001, Version 1.0)
1
AMIC Technology, Inc.