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LP62E16256EV-70LLT 参数 Datasheet PDF下载

LP62E16256EV-70LLT图片预览
型号: LP62E16256EV-70LLT
PDF下载: 下载PDF文件 查看货源
内容描述: 256K x 16位的低电压CMOS SRAM [256K X 16 BIT LOW VOLTAGE CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 15 页 / 166 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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LP62E16256E-T Series
Absolute Maximum Ratings*
VCC to GND ..............................................-0.5V to +3.0V
IN, IN/OUT Volt to GND ................... -0.5V to VCC + 0.5V
Operating Temperature, Topr ...................-25°C to +85°C
Storage Temperature, Tstg.....................-55°C to +125°C
Power Dissipation, P
T ......................................................................
0.7W
*Comments
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of this
device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied or intended. Exposure to the absolute
maximum rating conditions for extended periods may
affect device reliability.
DC Electrical Characteristics
(T
A
= -25°C to + 85°C, VCC = 1.65V to 2.2V, GND = 0V)
Symbol
Parameter
LP62E16256E-70LLT
Min.
I
LI
Input Leakage Current
-
Max.
1
µA
µA
V
IN
= GND to VCC
CE = V
IH
HB = V
IH
or OE = V
IH
or
WE = V
IH
V
I/O
= GND to VCC
CE = V
IL
, I
I/O
= 0mA
* Min. Cycle, Duty = 100%
CE = V
I
, I
I/O
= 0mA
-
10
mA
CE = V
IL
, V
IH
= VCC,
V
IL
= 0V, f = 1MHz,
I
I/O
= 0 mA
CE = V
IH
CE
VCC - 0.2V,
V
IN
0V
I
OL
= 0.1 mA
I
OH
= -0.1 mA
Unit
Conditions
I
LO
Output Leakage Current
-
1
I
CC
I
CC1
Active Power Supply Current
-
-
5
30
mA
mA
Dynamic Operating
Current
I
CC2
I
SB
I
SB1
V
OL
V
OH
Standby Current
-
-
-
1.4
0.5
10
0.2
-
mA
µA
V
V
Output Low Voltage
Output High Voltage
PRELIMINARY
(July, 2002, Version 0.0)
4
AMIC Technology, Inc.