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LP62S1024BV-70LLI 参数 Datasheet PDF下载

LP62S1024BV-70LLI图片预览
型号: LP62S1024BV-70LLI
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8位的低电压CMOS SRAM [128K X 8 BIT LOW VOLTAGE CMOS SRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 17 页 / 246 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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LP62S1024B-I Series
Timing Waveforms (continued)
Write Cycle 2
(Chip Enable Controlled)
t
WC
Address
t
AW
t
CW5
CE1
t
AS1
(4)
t
WR3
CE2
(4)
t
CW5
t
WP2
WE
t
DW
D
IN
t
DH
t
WHZ7
D
OUT
Notes: 1.
2.
3.
4.
t
AS
is measured from the address valid to the beginning of Write.
A Write occurs during the overlap (t
WP
) of a low CE1, a high CE2 and a low WE .
t
WR
is measured from the earliest of CE1 or WE going high or CE2 going low to the end of the Write cycle.
If the CE1 low transition or the CE2 high transition occurs simultaneously with the WE low transition or after
the WE transition, outputs remain in a high impedance state.
5. t
CW
is measured from the later of CE1 going low or CE2 going high to the end of Write.
6. OE is continuously low. ( OE = V
IL
)
7. Transition is measured
±
500mV from steady state. This parameter is sampled and not 100% tested.
(August, 2004, Version 1.2)
9
AMIC Technology, Corp.