AMS2306
DESCRIPTION
AMS2306
is the N-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
FEATURE
30V/3.5A, R
DS(ON)
= 55m-ohm (Typ.)
@VGS = 4.5V
30V/3.1A, R
DS(ON)
= 80m-ohm
@VGS = 2.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
3.Drain
3
D
G
1
1.Gate
2.Source
S
2
ORDERING INFORMATION
Part Number
Package
Part Marking
g
AMS2306
g
SOT-23-3L
04YA
※
Process Code : A ~ Z ; a ~ z
1
Advanced Monolithic Systems
http://www.ams-semitech.com
AMS [ Advanced Monolithic Systems Ltd ]
