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AMS2304 参数 Datasheet PDF下载

AMS2304图片预览
型号: AMS2304
PDF下载: 下载PDF文件 查看货源
内容描述: 超高密度电池设计极低的RDS ( ON) [Super high density cell design for extremely low RDS(ON)]
分类和应用: 电池
文件页数/大小: 6 页 / 684 K
品牌: AMS [ Advanced Monolithic Systems Ltd ]
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AMS2304
DESCRIPTION
AMS2304
is the N-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
FEATURE
30V/3.2A, R
DS(ON)
= 50m-ohm (Typ.)
@VGS = 4.5V
20V/3.1A, R
DS(ON)
= 65m-ohm
@VGS = 2.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
3.Drain
3
D
G
1
1.Gate
2.Source
S
2
PART MARKING
SOT-23-3L
3
04YA
1
Y: Year Code
2
A: Process Code
1
Advanced Monolithic Systems
http://www.ams-semitech.com