i
AMS2302
DESCRIPTION
AMS2302
is the N-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology.This high density process
is especially tailored to minimize on-state resistance.These devices are particularly
suited for low voltage application such as cellular phone and notebook computer
power management, other battery powered circuits, and low in-line power loss are
required. The product is in a very small outline surface mount package.
y
y
y
PIN CONFIGURATION
SOT-23
FEATURE
20V/3.6A, R
DS(ON)
= 70m
@VGS = 4.5V
20V/3.1A, R
DS(ON)
= 95 m
@VGS = 2.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23 package design
3.Drain
3
D
G
1
1.Gate
2.Source
S
2
PART MARKING
SOT-23
3
S02YA
1
Y: Year Code
2
A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
AMS2302
i
SOT-23
i
S02YA
※
Process Code : A ~ Z ; a ~ z
1
Advanced Monolithic Systems
http://www.ams-semitech.com
AMS [ Advanced Monolithic Systems Ltd ]
