AMS2301A
DESCRIPTION
AMS2301A
is the P-Channel logic enhancement mode power field effect transistor which is
produced using high cell density, DMOS trench technology.This high density process is
especially tailored to minimize on-state resistance.These devices are particularly suited for
low voltage application such as cellular phone and notebook computer power management,
other battery powered circuits, and low in-line power loss are required. The product is in a
very small outline surface mount package.
PIN CONFIGURATION
SOT-23
FEATURE
-20V/-3.2A,
R
DS(ON)
=85m (Typ.)
@V
GS
= -4.5V
-20V/-2.0A, R
DS(ON)
= 100m
@V
GS
= -2.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23 package design
3
D
G
1
1.Gate
2.Source
S
2
3.Drain
PART MARKING
SOT-23
3
S01YA
1
Y: Year Code
2
A: Process Code
1
Advanced Monolithic Systems
http://www.ams-semitech.com
AMS [ Advanced Monolithic Systems Ltd ]
