AMS2300
DESCRIPTION
The
AMS2300
i s the N-Channel logic enhancement mode power field effect transistor i s
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.These devices
are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other batter powered circuits, and low i n-line power loss
are needed in a very small outline surface mount package.
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PIN CONFIGURATION
SOT-23-3L
FEATURE
20V/6.0A, R
DS(ON)
= 22m (Typ.)
@V
GS
= 10V
20V/5.0A, R
DS(ON)
= 36m
@V
GS
= 4.5V
20V/4.5A, R
DS(ON)
= 45m
@V
GS
= 2.5V
20V/4.0A, R
DS(ON)
= 60m
@V
GS
= 1.8V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and
Maximum DC current capability
SOT-23-3L package design
3
D
G
1
S
2
1.Gate
2.Source
3.Drain
PART MARKING
SOT-23-3L
3
42YA
1
Y: Year Code
2
A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
g
AMS2300
g
SOT-23-3L
42YA
※
Process Code : A ~ Z ; a ~ z
1
Advanced Monolithic Systems
http://www.ams-semitech.com
AMS [ Advanced Monolithic Systems Ltd ]
