AMS3401M23RG
DESCRIPTION
AMS3401M23RG
is the P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
B
PIN CONFIGURATION
SOT-23-3L
FEATURE
-30V/-4.0A,
R
DS(ON)
= 53m (Typ.)
@V
GS
= -10V
-30V/-3.2A, R
DS(ON)
= 60m
@V
GS
= -4.5V
Super high density cell design for
Extremely low R
DS(ON)
Exceptional on-resistance and
maximum DC current capability
SOT-23-3L package design
3.Drain
3
D
G
1
1.Gate
2.Source
S
2
PART MARKING
SOT-23-3L
3
A1YA
1
Y: Year Code
2
A: Process Code
1
Advanced Monolithic Systems
http://www.ams-semitech.com
AMS [ Advanced Monolithic Systems Ltd ]
