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AS8510 参数 Datasheet PDF下载

AS8510图片预览
型号: AS8510
PDF下载: 下载PDF文件 查看货源
内容描述: 数据采集设备的电池传感器 [Data Acquisition Device for Battery Sensors]
分类和应用: 电池传感器
文件页数/大小: 46 页 / 1108 K
品牌: AMSCO [ AUSTRIAMICROSYSTEMS AG ]
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AS8510
Datasheet - E l e c t r i c a l C h a r a c t e r i s t i c s
6.4.2
Differential Input Amplifier for Voltage Channel
Parameter
Input voltage range
Input current
1, 10
Table 16. Differential Input Amplifier for Voltage Channel
Symbol
VIN_
AMP
IIN_
AMP
ICM
G = G1
G = G2
G = G3
G = G4
e
f
P
_AMP
V
NDIN
THD
ε
T
1
V
OS
Vos_ch
V
OSDRIFT
Notes:
1. Input for the voltage channel can be as high as 1220mV, in this high input case PGA will be bypassed.
2. Leakage test accuracy is limited by tester resource accuracy and tester hardware, especially at low temperatures due to condensing
moisture.
3. For gain 100 PGA input common mode is 0V and the minimum supply is 3.15V.
4. The measurement ranges are referred only by the gain of input amplifier, while other parameters such as bandwidth etc. are pro-
grammed independently.
5. This parameter is not measured directly in production. It is measured indirectly via gain measurements of the whole path. It is guaran-
teed by design.
6. Pole frequency of input amplifier changes with changing the GAIN. The number is valid for the gain at G1, while the bandwidth will be
higher for other ranges. This parameter is not measured in production.
7. Noise density calculated by taking system bandwidth as 150Hz.
8. Based on device evaluation. Not tested.
9. No impact on the measurement path. If the chopping is enabled, both the offset and offset drift will be eliminated.
10. For negative input voltages up to -160mV below ground, Input leakage is typically -20nA @ 65ºC due to forward conductance of
protection diode.
Conditions
Min
-160
VBAT_IN, ETR, ETS @ +160mV input
voltage at 125ºC with PGA
3
Typ
Max
+160
Units
mV
nA
mV
2, 10
-50
2
-160
+300
100
40
25
5
50
Absolute input voltage range
Gain1
Gain2
Gain3
Gain4
4, 5
4, 5
4, 5
4, 5
Gain deviation
Pole frequency
Noise density
5, 6
i = 1, 2, 3, 4
0.9 * Gi
15
25
1.1 * Gi
kHz
nV/√Hz
dB
±0.3
350
0
350
%
µV
LSB
µV
5, 7
Total harmonic distortion
Gain drift with temperature
9
8
For 150Hz input signal
-20ºC to +65ºC
Gain 5, 25, referenced to room
temperature
After trim at +65ºC
Chopping enabled
9
70
Input referred offset
Offset drift with temperature
www.austriamicrosystems.com/AS8510
Revision 3.4
11 - 46