AF2302N
20V N-Channel Enhancement Mode MOSFET
Features
- Advanced trench process technology
- High density cell design for ultra low on-resistance
- Excellent thermal and electrical capabilities
- Compact and low profile SOT-23 package
Product Summary
V
DS
= 20V
R
DS (on)
, V
GS
@4.5V, I
DS
@3.6A =65mΩ.
R
DS (on)
, V
GS
@2.5V, I
DS
@3.1A =95mΩ.
Pin Assignments
3
(Top View)
1. G
2. S
3. D
Pin Descriptions
Pin
No.
1
2
3
Pin
Name
G
S
D
Description
Gate
Source
Drain
1
2
Ordering information
A X
Feature
F :MOSFET
PN
2302N X X X
Package
W: SOT23
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
Block Diagram
D
S
G
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Jul 20, 2004
1/4
ANACHIP [ ANACHIP CORP ]
