AF4409P
P-Channel 30-V (D-S) MOSFET
ꢀ Absolute Maximum Ratings (TA=25ºC unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
-30
V
VGS
±12
V
TA=25ºC
TA=70ºC
10
ID
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
A
8.2
IDM
IS
±50
A
A
Continuous Source Current (Diode Conduction) (Note 1)
-2.1
3.1
TA=25ºC
TA=70ºC
PD
Power Dissipation (Note 1)
W
2
TJ, TSTG Operating Junction and Storage Temperature Range
-55 to 150
ºC
ꢀ Thermal Resistance Ratings
Symbol
Parameter
Maximum Junction-to-Case (Note 1)
Maximum Junction-to-Ambient (Note 1)
Maximum
Units
ºC/W
ºC/W
RθJC
RθJA
t < 5 sec
t < 10 sec
25
40
Note 1: surface Mounted on 1”x 1” FR4 Board.
Note 2: Pulse width limited by maximum junction temperature
ꢀ Specifications (TA=25ºC unless otherwise noted)
Limits
Typ.
Symbol
Static
Parameter
Test Conditions
Unit
Min.
Max.
V(BR)DSS Drain-Source breakdown Voltage
VGS=0V, ID=-250uA
VDS= VGS, ID=-250uA
VDS=0V, VGS=±12V
VDS=-20V, VGS=0V
VDS=-20V, VGS=0V,
TJ=55ºC
VDS=-5V, VGS=-10V
VGS=-4.5V, ID=-10A
VGS=-2.5V, ID=-8.4A
VGS=-4.5V, ID=-10A,
TJ=55ºC
VGS=-15V, ID=-9.5A
IS=-2.1A, VGS=0V
-30
-1
-
-
-
-3
±100
-1
V
V
nA
VGS(th)
IGSS
Gate-Threshold Voltage
Gate-Body Leakage
-1.6
-
-
-
IDSS
Zero Gate Voltage Drain Current
uA
A
-
-
-5
ID(on)
On-State Drain Current (Note 3)
-50
-
-
-
-
20
29
16.5
25
rDS(on)
Drain-Source On-Resistance (Note 3)
mΩ
-
18
23
gfs
VSD
Forward Tranconductance (Note 3)
Diode Forward Voltage
-
-
31
-0.7
-
S
V
-1.2
Dynamic (Note 4)
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
15
5.8
12
26
-
-
VDS=-15V, VGS=-5V,
ID=-10A
nC
nS
Qgs
Qgd
Switching
td(on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
-
-
-
-
15
12
62
46
26
21
108
71
V
DD=-15V, RL=15Ω,
tr
td(off)
tf
ID=-1A, VGEN=-10V,
RG=6Ω,
Note 3: Pulse test: PW < 300us duty cycle < 2%.
Note 4: Guaranteed by design, not subject to production testing.
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Jul 16, 2004
2/3
ANACHIP [ ANACHIP CORP ]
