欢迎访问ic37.com |
会员登录 免费注册
发布采购

AF4409PLA 参数 Datasheet PDF下载

AF4409PLA图片预览
型号: AF4409PLA
PDF下载: 下载PDF文件 查看货源
内容描述: P通道30 -V (D -S )的MOSFET [P-Channel 30-V (D-S) MOSFET]
分类和应用:
文件页数/大小: 3 页 / 150 K
品牌: ANACHIP [ ANACHIP CORP ]
 浏览型号AF4409PLA的Datasheet PDF文件第1页浏览型号AF4409PLA的Datasheet PDF文件第3页  
AF4409P
P-Channel 30-V (D-S) MOSFET
Absolute Maximum Ratings
(T
A
=25ºC unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note 1)
T
A
=25ºC
T
A
=70ºC
Pulsed Drain Current
(Note 2)
Continuous Source Current (Diode Conduction)
(Note 1)
T
A
=25ºC
Power Dissipation
(Note 1)
T
A
=70ºC
Operating Junction and Storage Temperature Range
Rating
-30
±12
10
8.2
±50
-2.1
3.1
2
-55 to 150
Units
V
V
A
A
A
W
ºC
Thermal Resistance Ratings
Symbol
R
θJC
R
θJA
Parameter
Maximum Junction-to-Case
(Note 1)
Maximum Junction-to-Ambient
(Note 1)
t
<
5 sec
t
<
10 sec
Maximum
25
40
Units
ºC/W
ºC/W
Note 1:
surface Mounted on 1”x 1” FR4 Board.
Note 2:
Pulse width limited by maximum junction temperature
Specifications
(T
A
=25ºC unless otherwise noted)
Symbol
Static
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
Parameter
Drain-Source breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
(Note 3)
Drain-Source On-Resistance
(Note 3)
Test Conditions
V
GS
=0V, I
D
=-250uA
V
DS
= V
GS
, I
D
=-250uA
V
DS
=0V, V
GS
=±12V
V
DS
=-20V, V
GS
=0V
V
DS
=-20V, V
GS
=0V,
T
J
=55ºC
V
DS
=-5V, V
GS
=-10V
V
GS
=-4.5V, I
D
=-10A
V
GS
=-2.5V, I
D
=-8.4A
V
GS
=-4.5V, I
D
=-10A,
T
J
=55ºC
V
GS
=-15V, I
D
=-9.5A
I
S
=-2.1A, V
GS
=0V
V
DS
=-15V, V
GS
=-5V,
I
D
=-10A
Min.
-30
-1
-
-
-
-50
-
-
-
-
-
-
-
-
-
-
-
-
Limits
Typ.
-
-1.6
-
-
-
-
16.5
25
18
31
-0.7
15
5.8
12
15
12
62
46
Max.
-
-3
±100
-1
-5
-
20
29
23
-
-1.2
26
-
-
26
21
108
71
S
V
Unit
V
V
nA
uA
A
mΩ
g
fs
Forward Tranconductance
(Note 3)
V
SD
Diode Forward Voltage
Dynamic
(Note 4)
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Switching
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall-Time
nC
V
DD
=-15V, R
L
=15Ω,
ID=-1A, VGEN=-10V,
RG=6Ω,
nS
Note 3:
Pulse test: PW
<
300us duty cycle
<
2%.
Note 4:
Guaranteed by design, not subject to production testing.
Anachip Corp.
www.anachip.com.tw
2/3
Rev. 1.0 Jul 16, 2004