AF4512C
P & N-Channel 30-V (D-S) MOSFET
Features
-Low r
DS(on)
Provides Higher Efficiency and Extends
Battery Life
-Miniature SO-8 Surface Mount Package Saves
Board Space
-High power and current handling capability
-Low side high current DC-DC Converter
applications
General Description
These miniature surface mount MOSFETs utilize High
Cell Density process. Low r
DS(on)
assures minimal
power loss and conserves energy, making this device
ideal for use in power management circuitry. Typical
applications are PWMDC-DC converters, power
management in portable and battery-powered
products such as computers, printers, battery charger,
telecommunication power system, and telephones
power system.
Product Summary
V
DS
(V)
30
-30
r
DS(on)
(mΩ)
40@V
GS
=4.5V
28@V
GS
=10V
80@V
GS
=-4.5V
52@V
GS
=-10V
I
D
(A)
6.0
7.0
-4.0
-5.2
Pin Assignments
S1
G1
S2
G2
1
2
3
4
8
7
6
5
Pin Descriptions
D1
D1
D2
D2
Pin Name
S1
G1
D1
S2
G2
D2
Description
Source (NMOS)
Gate (NMOS)
Drain (NMOS)
Source (PMOS)
Gate (PMOS)
Drain (PMOS)
SOP-8
Ordering information
A X
Feature
F :MOSFET
PN
4512C X X X
Package
S: SOP-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Jul 20, 2004
1/8
ANACHIP [ ANACHIP CORP ]
