AF4835P
P-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note 1)
Pulsed Drain Current
(Note 2)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
T
A
=25ºC
T
A
=70ºC
T
A
=25ºC
Rating
-30
±20
-8
-6
-50
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
W
W/ºC
ºC
ºC
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
(Note 1)
Max.
Maximum
50
Units
ºC/W
Electrical Characteristics
at T
J
=25ºC unless otherwise specified
Symbol
BV
DSS
∆BV
DSS
/
∆T
J
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance
(Note 3)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
(T
J
=25
o
C)
Drain-Source Leakage Current
(T
J
=70
o
C)
Gate-Source Leakage
Total Gate Charge
(Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time
(Note 3)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=-250uA
Reference to 25
o
C,
I
D
=-1mA
V
GS
=-10V, I
D
=-8A
V
GS
=-4.5V, I
D
=-5A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-15V, I
D
=-8A
V
DS
=-30V, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
GS
=±20V
I
D
=-4.6A,
V
DS
=-15V,
V
GS
=-10V
V
DS
=-15V,
I
D
=-1A,
R
G
=6Ω, V
GS
=-10V
R
D
=15Ω
V
GS
=0V,
V
DS
=-15V,
f=1.0MHz
Min.
-30
-
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.037
-
-
-
20
-
-
-
36
5.5
3.5
12
8
75
40
1530
900
280
Max.
-
-
20
35
-3
-
-1
uA
-25
±100
-
-
-
-
-
-
-
-
-
-
nA
nC
Units
V
V/
o
C
mΩ
V
S
ns
pF
Source-Drain Diode
Symbol
I
S
V
SD
Parameter
Continuous Source Current
(Body Diode)
Forward On Voltage
(Note 3)
2
Test Conditions
V
D
=V
G
=0V, V
S
=-1.2V
T
J
=25
o
C, I
S
=-2.1A,
V
GS
=0V
o
Min.
-
-
Typ.
-
-0.75
Max.
-2.08
-1.2
Unit
A
V
Note 1:
Surface mounted on 1 in copper pad of FR4 board; 125 C/W when mounted on Min. copper pad.
Note 2:
Pulse width limited by Max. junction temperature.
Note 3:
Pulse width
≤
300us, duty cycle
≤
2%.
Anachip Corp.
www.anachip.com.tw
2/6
Rev. 1.2
Nov 19, 2004
ANACHIP [ ANACHIP CORP ]
