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AF4978ND 参数 Datasheet PDF下载

AF4978ND图片预览
型号: AF4978ND
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-Channel Enhancement Mode Power MOSFET]
分类和应用:
文件页数/大小: 5 页 / 420 K
品牌: ANACHIP [ ANACHIP CORP ]
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AF4978N
N-Channel Enhancement Mode Power MOSFET
Features
- Low Gate Charge
- Single Drive Requirement
- Surface Mount Package
- Pb Free Plating Product
General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-252 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
Product Summary
BV
DSS
(V)
60
R
DS(ON)
(mΩ)
100
I
D
(A)
11
Pin Assignments
(Front View)
Pin Descriptions
Pin Name
Description
Source
Gate
Drain
3
2
1
D
S
S
G
D
G
Ordering information
A X
Feature
F: MOSFET
PN
4978N X X
Package
D: TO-252
Packing
Blank : Tube or Bulk
A : Tape & Reel
Block Diagram
D
S
G
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Sep 6, 2005
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