AF9926N
N-Channel Enhancement Mode Power MOSFET
Features
- Capable of 2.5V Gate Drive
- Low On-resistance
- Low Drive Current
- Surface Mount Package
General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
Product Summary
BV
DSS
(V)
20
R
DS(ON)
(mΩ)
30
I
D
(A)
6
Pin Assignments
S1
G1
S2
G2
1
2
3
4
8
7
6
5
Pin Descriptions
D1
D1
D2
D2
Pin Name
S1/2
G1/2
D1/2
Description
Source
Gate
Drain
SO-8
Ordering information
A X
Feature
F :MOSFET
PN
9926N X X X
Package
S: SO-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Sep 5, 2005
1/6
ANACHIP [ ANACHIP CORP ]
