AP139
300mA Low-Noise CMOS LDO
Typical Performance Characteristics
100
90
Vcc Vs Quiescent Current
1.6
1.4
Vout Vs Dropout Voltage
Quiescent Current (μA)
80
60
50
40
30
20
10
0
3.5
4
4.5
5
5.5
6
TA=25℃
Dropout Voltage (V)
70
1.2
1
0.8
0.6
0.4
0.2
Io=300mA
Io=200mA
Io=100mA
1.5
1.8
2
2.5
Vout (V)
2.8
3
3.3
3.5
6.5
7
0
Vcc (V)
0
-10
-20
-30
Power Supply Rejection Ratio
Iout=100mA
0
-10
-20
-30
BP=10nF
Power Supply Rejection Ratio
100mA
PSRR (dB)
PSRR (dB)
-40
-50
BP=1nF
-60
-70
-80
-90
1.0E+00
BP=20nF
1.0E+01
1.0E+02
1.0E+03
1.0E+04
1.0E+05 1.0E+06
BP=5nF
-40
10mA
-50
-60
1mA
-70
BP=10nF
-80
-90
1.0E+00
1.0E+05 1.0E+06
1.0E+01
1.0E+02
1.0E+03
1.0E+04
Frequency (Hz)
Frequency (Hz)
Power Supply Rejection Ratio
0
BP=0
-10
-20
-30
100mA
Vout Vs Current Limit
0.7
0.6
0.5
Current Limit (A)
PSRR (dB)
-40
-50
-60
10mA
0.4
0.3
0.2
0.1
Vcc=5V
0
1mA
-70
-80
-90
1.0E+00
1.0E+01
1.0E+02
1.0E+03
1.0E+04
1.0E+05
1.0E+06
1.5
1.8
2
2.5
2.8
3
3.3
3.5
Frequency (Hz)
Vout (V)
Anachip Corp.
www.anachip.com.tw
4/8
Rev.1.1 Jun 02, 2006
ANACHIP [ ANACHIP CORP ]
