AGB3300
Bias Circuit
A schematic of the basic, unmatched bias circuit for
the AGB Series Gain Blocks is shown in Figure 21.
The RF input and output terminations are 50W.
Inductor L1 provides DC power from V
SUPPLY
and
serves as an RF choke to maintain desired AC
performance. The input capacitor C1 and output
capacitor C2 are RF blocks that isolate DC current
from adjacent circuits. Capacitor C3 is used as an
RF bypass that minimizes noise from the supply.
In some applications, a feedback resistor R1 may
be added in series with L1, as shown in Figure 22,
for improved stability or to serve as a voltage drop for
operation from higher supply voltages.
Matching for RF Performance
The AGB3300 Gain Block amplifier can be used in
many fixed wireless frequency bands, such as the
824-894 MHz U.S. cellular bands, the 1850-1990 MHz
PCS band, the 880-960 MHz GSM band, the 2400-
2500 MHz ISM band, and the 2500-2686 MHz MMDS
band. Reactive matching circuits may be designed
for both the input and output, in order to optimize the
RF performance for a particular application. For
example, gain, linearity (OIP3) and return loss may
be improved over a particular frequency band of
interest.
Recommended matching circuits for various
applications, as well as wideband S-parameters to
use in the simulation of custom designs, are included
in this data sheet. For a particular application not
addressed in the data sheet, please consult with an
ANADIGICS Sales Reperesentative or Application
Engineer.
Evaluation Boards
A versatile evaluation board that enables users to
measure actual device performance has been
developed for the AGB Series Gain Blocks. The
generic layout allows the user to implement a wide
variety of matching circuits, in order to assess
performance for a particular application.
The evaluation board is 1.0 square, and is
fabricated on 0.031 thick FR-4 material. Figures 23
and 24 show the via hole locations and the layout
pattern on both sides of the evaluation board. The
vias have a 0.010 diameter and are plated through.
To request an evaluation board, please contact an
ANADIGICS Sales Reperesentative or Application
Engineer.
RF
Output
V
SUPPLY
C3
L1
C1
RF
Input
Gain
Block
V
DD
C2
Figure 21: Unmatched Bias Circuit
V
SUPPLY
C3
R1
ESD Sensitivity
Electrostatic discharges can cause permanent
damage to this device. Electrostatic discharges
accumulate on test equipment and the human body,
and can discharge without detection. Although the
AGB3300 has some internal ESD protection, proper
precautions and handling are strongly
recommended. Refer to the ANADIGICS application
note on ESD precautions.
S-Parameter Data
Table 8 depicts the raw Magnitude and Angle data for
an unmatched AGB3300 over the 50 to 3000 MHz
frequency range of operation. Data is shown in 100
MHz steps, with a characteristic impedance of 50
Ohms, V
DD
=+5V, and at T
A
= +25
o
C.
9
L1
C1
RF
Input
Gain
Block
V
DD
C2
RF
Output
Figure 22: Bias Circuit with Optional
Feedback / Voltage Drop Resistor
Data Sheet - Rev 2.1
06/2003
ANADIGICS [ ANADIGICS, INC ]
