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ALT6701 参数 Datasheet PDF下载

ALT6701图片预览
型号: ALT6701
PDF下载: 下载PDF文件 查看货源
内容描述: HELP4 UMTS2100 (频段1 ) LTE , WCDMA , CDMA多模PAM [HELP4 UMTS2100 (Band 1) LTE, WCDMA, CDMA Multimode PAM]
分类和应用: LTE
文件页数/大小: 12 页 / 769 K
品牌: ANADIGICS [ ANADIGICS, INC ]
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HELP4 UMTS2100 (Band 1)
LTE, WCDMA, CDMA Multimode PAM
TM
ALT6701
DATA SHEET - Rev 2.8
FEATURES
• CDMA/EVDO, WCDMA/HSPA and LTE
Compliant
• 4th Generation HELP
TM
technology
• High Efficiency (R99 waveform):
• 41 % @ P
OUT
= +28.4 dBm
• 31 % @ P
OUT
= +17 dBm
• 21 % @ P
OUT
= +13.5 dBm
• 26 % @ P
OUT
= +9 dBm
• 13 % @ P
OUT
= +3.5 dBm
ALT6701
Low Quiescent Current: 2 mA
Low Leakage Current in Shutdown Mode: <5 µA
Internal Voltage Regulator
Integrated “daisy chainable” directional coupler
with CPL
IN
and CPL
OUT
port.
Internal DC blocks on IN/OUT RF ports
Optimized for a 50 Ω System
1.8 V Control Logic
RoHS Compliant Package, 260
o
C MSL-3
M45 Package
10 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
talk and standby time. A “daisy chainable” directional
coupler is integrated in the module, thus eliminating
the need of an external coupler. The self-contained
3 mm x 3 mm x 1 mm surface mount package
incorporates matching networks optimized for output
power, efficiency, and linearity in a 50
system.
APPLICATIONS
Band 1 WCDMA/HSPA Wireless Devices
Band 1 LTE Wireless Devices
Band Class 6 CDMA/EVDO Wireless Devices
V
BATT
GND at Slug (pad)
11
10
10
V
CC
PRODUCT DESCRIPTION
The ALT6701 HELP4
TM
PA is a 4th generation HELP
TM
product for LTE and WCDMA devices operating in
UMTS2100 (Band 1) and for CDMA devices operating
in Band Class 6. This PA incorporates ANADIGICS’
HELP4
TM
technology to deliver exceptional efficiency
at low power levels and low quiescent current without
the need for external voltage regulators or converters.
The device is manufactured using advanced InGaP-
Plus
TM
HBT technology offering state-of-the-art
reliability, temperature stability, and ruggedness.
Three selectable bias modes that optimize efficiency
for different output power levels and a shutdown
mode with low leakage current increase handset
RF
IN
2
2
CPL
9
RF
OUT
V
MODE2
3
3
Bias Control
Voltage Regulation
8
8
7
7
CPL
IN
V
MODE1
44
GND
V
EN
55
6
CPL
OUT
Figure 1: Block Diagram
03/2012