HELP3E Dual-band Cellular & PCS LTE
3.4 V Linear Power Amplifier Module
TM
ALT6725
PRELIMINARY DATA SHEET - Rev 1.0
FEATURES
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InGaP HBT Technology
High Efficiency:
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35 % @ P
OUT
= +27.5 dBm
16 % @ P
OUT
= +15 dBm
8 % @ P
OUT
= +9 dBm
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Low Quiescent Current: 4 mA
Internal Voltage Regulation
Built-in Directional Coupler
Common V
MODE
Control Line
Suitable for SMPS and average power tracking
systems with variable supply voltages
APT can reduce TS.09 average power
consumption more than 25%
Reduced External Component Count
Thin Package: 0.9 mm
RoHS Compliant Package, 260
o
C MSL-3
is designed for use both with and without average
power tracking (APT). APT can be used to optimize
the Vcc level for the desired output power level and
linearity, which greatly reduces the total current
drawn from the battery. This feature, in conjunction
with selectable operating modes, enables significant
improvements in overall power added efficiency of the
ALT6725 across the entire dynamic range of operating
powers. APT requires use of an external variable
voltage supply (DC-DC converter), which is used to
provide the variable voltage to Vcc pad of the amplifier.
A low-leakage shutdown mode increases standby
time. This PA has built-in directional couplers for each
band, with a common coupler output port CPL_OUT.
The 3 mm x 5 mm x 0.9 mm surface mount package
incorporates matching networks optimized for output
power, efficiency and linearity in a 50 Ω system. The
device is manufactured on an advanced InGaP HBT
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness.
APPLICATIONS
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Dual-band Wireless Handsets and Data Devices
for LTE/CDMA/EVDO networks:
UMTS Band 5, 6, 18, 19, & 26
UMTS Band 2 & 25
Cellular BC 0 and 10
PCS BC 1 and 14
V
EN_CELL
1
Bias Control
Voltage Regulation
14
GND
RF
IN_CELL
2
CPL
13
RF
OUT_CELL
PRODUCT DESCRIPTION
V
MODE1
3
12
V
CC
ALT6725 addresses the demand for increased
integration in dual-band handsets for LTE networks.
The small footprint 3 mm x 5 mm x 0.9 mm surface
mount RoHS compliant package contains independent
RF PA paths to ensure optimal performance in both
frequency bands in less board area than two single
band PAs. The package pinout was chosen to enable
handset manufacturers to independently provide
bias to both power amplifiers and simplify control
with common mode pins. The ALT6725 is part of
ANADIGICS’ 3rd generation of High-Efficiency-at-
Low-Power (HELP3E™) family of power amplifiers,
which deliver low quiescent currents and significantly
greater efficiency through selectable bias modes for
high, medium and low power operation. The ALT6725
V
BATT
4
11
V
CC
A
V
MODE2
5
10
CPL
OUT
RF
IN_PCS
6
Bias Control
Voltage Regulation
CPL
9
GND
V
EN_PCS
7
8
RF
OUT_PCS
GND at Slug (pad)
Figure 1: Block Diagram
07/2012
ANADIGICS [ ANADIGICS, INC ]
