AMT8210
ELECTRICAL CHARACTERISTICS
Table 1: Absolute Maximum Ratings
PARAMETER
Supply Voltage
Optical Input Power
Storage Temperature
MIN
-0.5
-
- 40
MAX
+3.8
+3
+ 125
UNIT
V
dBm
oC
Stresses in excess of the absolute ratings may cause permanent damage. Functional
operation is not implied under these conditions. Exposure to absolute ratings for extended
periods of time may adversely affect reliability.
Table 2: Electrical Specifications
PARAMETER
Wavelength
Detector Active Area
Sensitivity
(1)
Overload
Responsivity 1550nm
Responsivity 1310nm
Small signal transimpedance gain (50
Ω)
Small signal 3dB bandwidth
Output resistance
Output voltage swing (differential)
TIA supply voltage
TIA supply current
Power consumption
Operating temperature
31
MIN
1250
-
-25.0
-
-
-
800
TYP
-
75
-27
0
0.95
0.85
9.1
1000
50
3.3
21
70
+25
MAX
1620
-
-
-
-
-
-
-
500
3.6
UNIT
nm
um
dB
dBm
A/W
A/W
KΩ
MHz
Ω
mV
P-P
V
mA
mW
oC
2.97
-
-
-40
-10
+85
(1) 1.25Gb/s PRBS 2 -1, 1550nm, ER >12dB, BER 10
Figure 2: Pin location (4-pin)
GND
Figure 3: Pin location (5-pin)
GND
Table 3: Pin description
NAME
OUT
VCC
OUTQ
GND
DESCRIPTION
TIA Output (Non-Inverted)
Supply Voltage (+3.3V)
TIA Output (Inverted)
Ground
OUTQ
OUT
OUTQ
VCC
OUT
VPD
VCC
(Bottom View)
(Bottom View)
Rev 1.1
2
ANADIGICS [ ANADIGICS, INC ]
