AMT8650
ELECTRICAL CHARACTERISTICS
Table 1: Absolute Maximum Ratings
PARAMETER
Supply Voltage
Photodiode bias Voltage
Optical Input Power
Storage Temperature
MIN
-0.5
2.5
-
- 40
MAX
5.5
10
+4
+ 85
UNIT
V
V
dBm
oC
Stresses in excess of the absolute ratings may cause permanent damage. Functional
operation is not implied under these conditions. Exposure to absolute ratings for extended
periods of time may adversely affect reliability.
Table 2: Electrical Specifications
PARAMETER
Wavelength
(1)
Sensitivity
Overload
Responsivity 1550nm
Responsivity 1310nm
Dark current
Small signal transimpedance gain (differential)
Small signal 3dB bandwidth
Low frequency cutoff
Output return loss (differential)
(2)
Output voltage swing (differential)
Optical return loss
Photodiode bias voltage
TIA supply voltage
TIA supply current
Power consumption
Operating temperature
(1)
(2)
10Gb/s PRBS 2
31
-, 1550nm, ER >12dB
�½(S
11
- S
21
+ S
22
- S
12
), 100MHz – 9GHz
MIN
1250
-
-
0.80
0.75
-
-
-
-
-
-
50
4
4.7
-
-
-40
TYP
-
-19
3
0.90
0.85
0.2
10
8.5
30
9
600
55
5
5
48
240
25
MAX
1620
-
-
-
-
5
-
-
-
-
-
-
9
5.3
-
-
85
UNIT
nm
dB
dBm
A/W
A/W
nA
KΩ
GHz
KHz
dB
mV
P-P
dB
V
V
mA
mW
oC
Figure 2: Pin location
2
3
PIN
1
2
3
4
5
NAME
VOUTP
V
PD
V
TIA
VOUTN
Ground
Table 3: Pin description
DESCRIPTION
Non-inverted output voltage. Logical ‘1’ with
an optical input. Output is not AC coupled.
Photodiode bias: 5V
Amplifier supply voltage: 5V
Inverted output voltage: Logical ‘0’ with an
optical input. Output is not AC coupled
Ground
1
4
5
ADVANCED PRODUCT INFORMATION – Rev 0.0
01/2006
2