欢迎访问ic37.com |
会员登录 免费注册
发布采购

AS29LV800B-80SC 参数 Datasheet PDF下载

AS29LV800B-80SC图片预览
型号: AS29LV800B-80SC
PDF下载: 下载PDF文件 查看货源
内容描述: 3V 1M × 8 / 512K × 16的CMOS闪存EEPROM [3V 1M】8/512K】16 CMOS Flash EEPROM]
分类和应用: 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 25 页 / 440 K
品牌: ANADIGICS [ ANADIGICS, INC ]
 浏览型号AS29LV800B-80SC的Datasheet PDF文件第1页浏览型号AS29LV800B-80SC的Datasheet PDF文件第2页浏览型号AS29LV800B-80SC的Datasheet PDF文件第4页浏览型号AS29LV800B-80SC的Datasheet PDF文件第5页浏览型号AS29LV800B-80SC的Datasheet PDF文件第6页浏览型号AS29LV800B-80SC的Datasheet PDF文件第7页浏览型号AS29LV800B-80SC的Datasheet PDF文件第8页浏览型号AS29LV800B-80SC的Datasheet PDF文件第9页  
March 2001
®
AS29LV800
Operating modes
Mode
ID read MFR code
ID read device code
Read
Standby
Output disable
Write
Enable sector protect
Sector unprotect
Temporary sector
unprotect
Verify sector protect
Hardware Reset
CE
L
L
L
H
L
L
L
L
X
L
X
OE
L
L
L
X
H
H
V
ID
V
ID
X
L
L
X
WE
H
H
H
X
H
L
Pulse/L
Pulse/L
X
H
H
X
A0
L
H
A0
X
X
A0
L
L
X
L
L
X
A1
L
L
A1
X
X
A1
H
H
X
H
H
X
A6
L
L
A6
X
X
A6
L
H
X
L
H
X
A9
V
ID
V
ID
A9
X
X
A9
V
ID
V
ID
X
V
ID
V
ID
X
RESET
H
H
H
H
H
H
H
H
V
ID
H
H
L
DQ
Code
Code
D
OUT
High Z
High Z
D
IN
X
X
X
Code
Code
High Z
Verify sector unprotect
L
L = Low (<V
IL
) = logic 0; H = High (>V
IH
) = logic 1; V
ID
= 10.0 ± 1.0V; X = don’t care.
In ×16 mode, BYTE = V
IH
. In ×8 mode, BYTE = V
IL
with DQ8-DQ14 in high Z and DQ15 = A-1.
Verification of sector protect/unprotect during A9 = V
ID.
Mode definitions
Item
ID MFR code,
device code
Read mode
Description
Selected by A9 = V
ID
(9.5V–10.5V), CE = OE = A1 = A6 = L, enabling outputs.
When A0 is low (V
IL
) the output data = 52h, a unique Mfr. code for Alliance Semiconductor Flash products.
When A0 is high (V
IH
), D
OUT
represents the device code for the AS29LV800.
Selected with CE = OE = L, WE = H. Data is valid in t
ACC
time after addresses are stable, t
CE
after CE is low
and t
OE
after OE is low.
Selected with CE = H. Part is powered down, and I
CC
reduced to <1.0 µA when CE = V
CC
± 0.3V = RESET. If
activated during an automated on-chip algorithm, the device completes the operation before entering
standby.
Selected with CE = WE = L, OE = H. Accomplish all Flash erasure and programming through the command
register. Contents of command register serve as inputs to the internal state machine. Address latching occurs
on the falling edge of WE or CE, whichever occurs later. Data latching occurs on the rising edge WE or CE,
whichever occurs first. Filters on WE prevent spurious noise events from appearing as write commands.
Hardware protection circuitry implemented with external programming equipment causes the device to
disable program and erase operations for specified sectors. For in-system sector protection, refer to Sector
protect algorithm on page 14.
Disables sector protection for all sectors using external programming equipment. All sectors must be
protected prior to sector unprotection. For in-system sector unprotection, refer to Sector unprotect algorithm
on page 14.
Verifies write protection for sector. Sectors are protected from program/erase operations on commercial
programming equipment. Determine if sector protection exists in a system by writing the ID read command
sequence and reading location XXX02h, where address bits A12–18 select the defined sector addresses. A
logical 1 on DQ0 indicates a protected sector; a logical 0 indicates an unprotected sector.
Standby
Output disable Part remains powered up; but outputs disabled with OE pulled high.
Write
Enable
sector protect
Sector
unprotect
Verify sector
protect/
unprotect
3/22/01; V.1.0
Alliance Semiconductor
P. 3 of 25