ATA06211
(T
A
= 25
°
C, V
DD
Table 3: Electrical Specifications
(1)
=+5.0V + 10%, C
DIODE
+ C
STRAY
= 0.5 pF, Det. cathode to I
IN
)
PAR AMETER
Transresi stance (R
L
=
¥
,I
DC
<500nA)
Transresi stance (R
L
=50
W
)
(1)
Bandwi dth -3dB
Input Resi stance
(2)
Output Resi stance
Supply C urrent
Input Offset Voltage
Output Offset Voltage
AGC Threshold (I
IN
)
(3)
Opti cal Overload
(4)
MIN
2.5
500
30
15
1.4
60
-3
TYP
6
3
550
280
50
30
1.6
1.8
100
0
50
16
±1
MAX
U N IT
K
W
K
W
MHz
W
60
45
1.9
W
mA
Volts
Volts
mA
dB m
60
nA
m
se c
Input Noi se C urrent
(5)
AGC Ti me C onstant
(6)
Offset Voltage D ri ft
Opti cal Sensi ti vi ty
(7)
Operati ng Voltage Range
Operati ng Temperature Range
-31
+ 4.5
- 40
mV/ º C
dB m
+ 6.0
85
Volts
ºC
-32
+ 5.0
Notes:
1. f = 50MHz
2. Measured with I
in
below AGC Threshold. During AGC, input impedance will decrease
proportionally to I
in.
3. Defined as the I
in
where Transresistance has decreased by 50%.
4. See note on Indirect Measurement of Optical Overload.
5. See note on Measurement of Input Referred Noise Current.
6. C
AGC
= 220 pF
7. Parameter is guaranteed (not tested) by design and characterization data @622 Mb/s,
assuming dectector responsivity of 0.9.
PRELIMINARY DATA SHEET - Rev 4
08/2001
3
ANADIGICS [ ANADIGICS, INC ]
