GSM850/GSM900/DCS/PCS
Quad Band Power Amplifier Module
With Integrated Power Control
FEATURES
PRELIMINARY DATA SHEET - Rev 1.0
InGaP HBT Technology
Integrated Power Control (CMOS)
Quad Band Applications
+35 dBm GSM Output Power at 3.5 V
+33 dBm DCS/PCS Output Power at 3.5 V
55% GSM PAE
50% DCS/PCS PAE
Small Footprint: 7 x 10mm
Low Profile: 1.4mm
Power Control Range: >50 dB
GPRS Capable (Class 12)
Moisture Sensitivity Level (MSL) 3 at 260
°
C
AWT6108
AW
T61
08
APPLICATIONS
GSM850/GSM900/DCS/PCS Handsets
20 Pin 7mm x 10mm
Surface Mount Module
Dual/Tri/Quad Band PDA
PRODUCT DESCRIPTION
This quad band power amplifier module is designed
to support dual, tri and quad band applications. The
module includes an integrated power control
scheme that facilitates fast and easy production
calibration and reduces the number of external
components required to complete a power control
function.
The amplifiers power control range is typically
55dB, with the output power set by applying an
analog voltage to V
RAMP
. The logical control inputs,
TX_EN and BS, are both 1.8 V and 3 V logic
compliant. The TX_EN is used to enable the
amplifier typically with the TX burst. The BS is used
to select which amplifier is enabled.
There are two amplifier chains, one to support
GSM850/900 bands, the other for DCS/PCS bands.
All of the RF ports for this device are internally
matched to 50
W.
Internal DC blocks are provided at
the RF ports.
Figure 1: Block Diagram
08/2003
ANADIGICS [ ANADIGICS, INC ]
