AWT6133
PCS/CDMA 3.5V/29dBm
Linear Power Amplifier Module
Data Sheet - Rev 2.0
FEATURES
•
•
•
•
•
•
•
•
•
InGaP HBT Technology
High Efficiency: 38%
Low Quiescent Current: 50 mA
Low Leakage Current in Shutdown Mode: <1
µA
V
REF
= +2.85 V (+2.7 V min over temp)
Optimized for a 50
Ω
System
Low Profile Miniature Surface Mount Package:
1.56 mm Max
CDMA 1XRTT Compliant
CDMA 1xEV-DO Compliant
APPLICATIONS
•
•
PCS CDMA Wireless Handsets
Dual Band CDMA Wireless Handsets
M7 Package
10 Pin 4 mm x 4 mm x 1.5 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6133 meets the increasing demands for
higher efficiency and linearity in CDMA 1XRTT
handsets. The PA module is optimized for V
REF
= +2.85 V,
a requirement for compatibility with the Qualcomm®
6000 chipset. The device is manufactured on an
advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness. Selectable bias modes that optimize
efficiency for different output power levels, and a
shutdown mode with low leakage current, increase
handset talk and standby time. The self-contained
4 mm x 4 mm x 1.5 mm surface mount package
incorporates matching networks optimized for output
power, efficiency, and linearity in a 50
Ω
system.
GND at slug (pad)
V
CC
RF
IN
GND
1
2
3
Bias Control
10
V
CC
9
8
7
6
GND
RF
OUT
GND
GND
V
MODE
4
V
REF
5
Figure 1: Block Diagram
12/2004