AWT6134
KPCS/CDMA 3.4V/28dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.0
FEATURES
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InGaP HBT Technology
High Efficiency: 39%
Low Quiescent Current: 48 mA
Low Leakage Current in Shutdown Mode: <1
µA
V
REF
= +2.8 V (+2.7 V min over temp)
Optimized for a 50
Ω
System
Low Profile Miniature Surface Mount Package:
1.56mm Max
CDMA 1XRTT Compliant
CDMA 1xEV-DO Compliant
APPLICATIONS
•
Korean PCS CDMA Wireless Handsets
M7 Package
10 Pin 4mm x 4mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6134 meets the increasing demands for
higher efficiency and linearity in CDMA 1XRTT
handsets. The PA module is optimized for V
REF
= +2.8 V,
a requirement for compatibility with the Qualcomm
6000 chipset. The device is manufactured on an
advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness. Selectable bias modes that optimize
efficiency for different output power levels, and a
shutdown mode with low leakage current, increase
handset talk and standby time. The self-contained
4mm x 4mm surface mount package incorporates
matching networks optimized for output power,
efficiency, and linearity in a 50
Ω
system.
GND at slug (pad)
V
CC
RF
IN
GND
1
2
3
Bias Control
10
V
CC
9
8
7
6
GND
RF
OUT
GND
GND
V
MODE
4
V
REF
5
Figure 1: Block Diagram
07/2003