FEATURES
ADVANCED PRODUCT INFORMATION - Rev 0.5
GSM850/GSM900/DCS/PCS
Quad Band Power Amplifier Module
With Integrated Power Control
AWT6146
InGaP HBT Technology
Quad Band Applications
+35 dBm GSM Output Power at 3.5 V
Integrated Power Control (CMOS)
+33 dBm DCS/PCS Output Power at 3.5 V
55% GSM850/900 PAE
50% DCS/PCS PAE
Small Footprint 7mm x 7mm
Low Profile 1.3mm
Power Control Range >50 dB
GPRS Capable (class 12)
APPLICATIONS
GSM850/GSM900/DCS/PCS Handsets
Dual/Tri/Quad Band PDA
18 Pin
7mm x 7mm
Amplifier Module
PRODUCT DESCRIPTION
This quad band power amplifier module is designed
to support dual, tri and quad band applications. The
module includes an integrated power control
scheme that facilitates fast and easy production
calibration and reduces the number of external
components required to complete a power control
function.
The amplifiers power control range is typically
55 dB, with the output power set by applying an
analog voltage to V
RAMP
. The logical control inputs,
V CC2
DCS/PCS
TX_EN and BS, are both 1.8 V and 3 V logic
compliant. The TX_EN is used to enable the
amplifier typically with the TX burst. The BS is used
to select which amplifier is enabled.
There are two amplifier chains, one to support
GSM850/900 bands, the other for DCS/PCS bands.
All of the RF ports for this device are internally
matched to 50
W.
Internal DC blocks are provided at
the RF ports.
DCS/PCS_IN
DCS/PCS_OUT
BS
TX
_EN
VBATT
VREG
V RAMP
Bias and Power
Control
VCC_OUT
GSM850/900_IN
GSM850/900_OUT
GSM850/900
V CC2
Figure 1: Block Diagram
11/2003