AWT6167R
GSM900/DCS
Dual Band Power Amplifier Module
With Integrated Power Control
FEATURES
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Integrated Vreg (regulated supply)
Harmonic Performance
≤
-20 dBm
High Efficiency (PAE) at Pmax:
-GSM900, 55%
-DCS, 53%
+35 dBm GSM900 Output Power at 3.5 V
+33 dBm DCS Output Power at 3.5 V
55 dB Dynamic Range
GPRS Class 12 Capable
RoHS Compliant Package, 250°C MSL-3
PRELIMINARY DATA SHEET - Rev 1.0
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•
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AWT6167
R
APPLICATIONS
•
Dual/Tri/Quad Band Handsets & PDAs
M15 Package
18 Pin 6 mm x 6 mm x 1.3 mm
Amplifier Module
PRODUCT DESCRIPTION
As with previous generations, the AWT6167R
integrated CMOS power control scheme simplifies
the design of the transmitter by eliminating the need
for external power control circuitry.
The AWT6167R input and output terminals are
internal matched to 50 ohms and DC blocked,
V
CC2
reducing the number of external components
required in the final application. Both PA die, GSM900
and DCS, are fabricated using state of the art InGaP
HBT technology, known for it is proven reliability and
temperature stability.
DCS
_IN
B
S
TX_
EN
V
BATT
C
EXT
V
RAMP
GSM900
_IN
MATCH
MATCH
DCS
_OUT
CMOS BIAS/Integrated Power Control
V
CC_OUT
H(s)
MATCH
MATCH
GSM900
_OUT
V
CC2
Figure 1: Block Diagram
06/2005